13003CDH
Preliminary
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS (Note)
Collector-Emitter Sustaining Voltage
VCEO(SUS) IC=10mA , IB=0
400
V
TC=25°C
1
5
1
V
V
CEO=Rated Value,
BE(OFF)=1.5 V
Collector Cutoff Current
ICEO
IEBO
mA
mA
TC=100°C
Emitter Cutoff Current
VEB=9V, IC=0
SECOND BREAKDOWN
Second Breakdown Collector Current with bass
forward biased
Is/b
See Fig.5
See Fig.6
Clamped Inductive SOA with base reverse biased
ON CHARACTERISTICS (Note)
RBSOA
hFE1
hFE2
IC=0.5A, VCE=5V
14
5
57
30
DC Current Gain
IC=1A, VCE=5V
IC=0.5A, IB=0.1A
0.5
1
IC=1A, IB=0.25A
Collector-Emitter Saturation Voltage
VCE(SAT)
V
V
IC=1.5A, IB=0.5A
3
IC=1A, IB=0.25A, TC=100°C
IC=0.5A, IB=0.1A
1
1
Base-Emitter Saturation Voltage
VBE(SAT)
IC=1A, IB=0.25A
1.2
1.1
IC=1A, IB=0.25A, TC=100°C
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
Output Capacitance
fT
IC=100mA, VCE=10V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
4
10
21
MHz
pF
COB
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
tD
tR
tS
tF
0.05 0.1 μs
Rise Time
0.5
2
1
4
μs
μs
VCC=125V, IC=1A, B1=IB2=0.2A,
tP=25μs, Duty Cycle≤1%
Storage Time
Fall Time
0.4 0.7 μs
Inductive Load, Clamped (Table 1)
Storage Time
tSTG
tC
1.7
4
μs
IC=1A, VCLAMP=300V, IB1=0.2A,
Crossover Time
0.29 0.75 μs
VBE(OFF)=5VDC, TC=100°C
Fall Time
tF
0.15
μs
Diode Forward Voltage
Note: Pulse Test: PW=300μs, Duty Cycle≤2%
VF
IF=0.5A
1.5
V
UNISONIC TECHNOLOGIES CO., LTD
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QW-R223-022.b
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