Datasheet > 12N70KL-TF1-T

12N70KL-TF1-T

更新时间： 2022-02-26 11:55:01

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
5页	236K
描述
N-CHANNEL POWER MOSFET

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数据手册

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12N70KL-TF1-T 数据手册

12N70K-MT

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

700

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous

Drain Current

Pulsed (Note 2)

Single Pulsed (Note 3)

I_DM

Avalanche Energy

E_AS

220

V/ns

°C/W

°C

Peak Diode Recovery dv/dt (Note 4)

Power Dissipation

dv/dt

P_D

4.5

Junction Temperature

T_J

+150

-55 ~ +150

Operating Temperature

Storage Temperature

T_OPR

T_STG

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L=3mH, I_AS=12A, V_DD= 50V, R_G=25Ω, Starting T_J=25°C

4. I_SD≤12A, di/dt ≤200A/μs, V_DD≤BV_DSS, Starting T_J=25°C



THERMAL DATA

PARAMETER

SYMBOL

θ_JA

RATINGS

62.5

UNIT

°C/W

Junction to Ambient

Junction to Case

θ_JC

2.40



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

BV_DSS

I_DSS

V_GS= 0 V, I_D= 250 μA

700

V_DS= 700 V, V_GS= 0 V

V_GS= ±30 V, V_DS= 0 V

I_D=250μA,Referenced to 25°C

μA

I_GSS

△BV_DSS/△T_J

±100 nA

V/°C

0.7

V_GS(TH)

R_DS(ON)

V_DS= V_GS, I_D= 250μA

2.0

4.0

0.70 0.83

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_GS= 10V, I_D= 6.0A

Ω

C_ISS

C_OSS

C_RSS

1600 1900 pF

160 270 pF

V_DS= 25 V, V_GS= 0 V,

Output Capacitance

f = 1MHz

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

96 120 ns

122 135 ns

184 200 ns

102 135 ns

Turn-On Rise Time

V_DD=30V, I_D=0.5A,

R_G=25Ω (Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_G

_DS=50V, V_GS=1.0V,

Gate-Source Charge

Q_GS

Q_GD

I_D=1.3A (Note 1, 2)

Gate-Drain Charge

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS= 0 V, I_S= 12A

1.4

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

2 of 5

QW-R205-028.D

www.unisonic.com.tw

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