C0G (NP0) Dielectric
Specifications and Test Methods
Parameter/Test
Operating Temperature Range
Capacitance
NP0 Specification Limits
-55ºC to +125ºC
Measuring Conditions
Temperature Cycle Chamber
Within specified tolerance
Freq.: 1.0 MHz ± 10% for cap ≤ 1000 pF
1.0 kHz ± 10% for cap > 1000 pF
Voltage: 1.0Vrms ± .2V
<30 pF: Q≥ 400+20 x Cap Value
≥30 pF: Q≥ 1000
Q
Charge device with rated voltage for
60 ± 5 secs @ room temp/humidity
100,000MΩ or 1000MΩ - µF,
whichever is less
Insulation Resistance
Charge device with 250% of rated voltage for
1-5 seconds, w/charge and discharge current
limited to 50 mA (max)
Dielectric Strength
No breakdown or visual defects
Note: Charge device with 150% of rated
voltage for 500V devices.
Deflection: 2mm
Appearance
No defects
Test Time: 30 seconds
Capacitance
Variation
±5% or ±.5 pF, whichever is greater
Resistance to
Flexure
Q
Meets Initial Values (As Above)
≥ Initial Value x 0.3
Stresses
Insulation
Resistance
Dip device in eutectic solder at 230 ± 5ºC
for 5.0 ± 0.5 seconds
≥ 95% of each terminal should be covered
with fresh solder
Solderability
Appearance
No defects, <25% leaching of either end terminal
≤ ±2.5% or ±.25 pF, whichever is greater
Capacitance
Variation
Dip device in eutectic solder at 260ºC for 60sec-
onds. Store at room temperature for 24 ± 2hours
before measuring electrical properties.
Resistance to
Q
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Solder Heat
Insulation
Resistance
Dielectric
Strength
Meets Initial Values (As Above)
Appearance
No visual defects
Step 1: -55ºC ± 2º
30 ± 3 minutes
Capacitance
Variation
≤ ±2.5% or ±.25 pF, whichever is greater
Step 2: Room Temp
≤ 3 minutes
Thermal
Shock
Q
Meets Initial Values (As Above)
Meets Initial Values (As Above)
Step 3: +125ºC ± 2º
Step 4: Room Temp
30 ± 3 minutes
Insulation
≤ 3 minutes
Resistance
Dielectric
Strength
Repeat for 5 cycles and measure after
Meets Initial Values (As Above)
24 hours at room temperature
Appearance
No visual defects
Capacitance
Variation
≤ ±3.0% or ± .3 pF, whichever is greater
Charge device with twice rated voltage in
test chamber set at 125ºC ± 2ºC
for 1000 hours (+48, -0).
≥ 30 pF:
Q≥ 350
Q
Load Life
≥10 pF, <30 pF:
<10 pF:
Q≥ 275 +5C/2
Q≥ 200 +10C
(C=Nominal Cap)
Remove from test chamber and stabilize at
room temperature for 24 hours
before measuring.
Insulation
≥ Initial Value x 0.3 (See Above)
Meets Initial Values (As Above)
Resistance
Dielectric
Strength
Appearance
No visual defects
Capacitance
Variation
≤ ±5.0% or ± .5 pF, whichever is greater
Store in a test chamber set at 85ºC ± 2ºC/
85% ± 5% relative humidity for 1000 hours
(+48, -0) with rated voltage applied.
≥ 30 pF:
≥10 pF, <30 pF:
<10 pF:
Q≥ 350
Load
Q
Q≥ 275 +5C/2
Q≥ 200 +10C
Humidity
Remove from chamber and stabilize at room
Insulation
≥ Initial Value x 0.3 (See Above)
temperature for 24 ± 2 hours before measuring.
Resistance
Dielectric
Strength
Meets Initial Values (As Above)
051818
55
5秒后页面跳转
深入解析AD7606高性能多通道模数转换器：资料手册参数分析
74HC573三态非易失锁存器(Latch)资料手册参数分析
MAX3232 RS-232电平转换器资料手册参数分析
MAX485 RS-485/RS-422收发器资料手册参数分析
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
