5秒后页面跳转
11LC020T-IMS PDF预览

11LC020T-IMS

更新时间: 2024-01-19 06:05:54
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
44页 801K
描述
1K-16K UNI/O® Serial EEPROM Family Data Sheet

11LC020T-IMS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:ROHS COMPLIANT, PLASTIC, SOT-23, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:15 weeks
风险等级:1.25Samacsys Description:2K 256X8 2.5V Ser. EEPROM,11LC020T-I/TT
最大时钟频率 (fCLK):1 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesJESD-30 代码:R-PDSO-G3
JESD-609代码:e3长度:2.9 mm
内存密度:2048 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:3
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TO-236封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/5 V
认证状态:Not Qualified座面最大高度:1.12 mm
串行总线类型:1-WIRE最大待机电流:0.000005 A
子类别:EEPROMs最大压摆率:0.005 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:1.3 mm
最长写入周期时间 (tWC):10 ms写保护:SOFTWARE

11LC020T-IMS 数据手册

 浏览型号11LC020T-IMS的Datasheet PDF文件第1页浏览型号11LC020T-IMS的Datasheet PDF文件第2页浏览型号11LC020T-IMS的Datasheet PDF文件第4页浏览型号11LC020T-IMS的Datasheet PDF文件第5页浏览型号11LC020T-IMS的Datasheet PDF文件第6页浏览型号11LC020T-IMS的Datasheet PDF文件第7页 
11AAXXX/11LCXXX  
1.0  
ELECTRICAL CHARACTERISTICS  
(†)  
Absolute Maximum Ratings  
VCC.............................................................................................................................................................................6.5V  
SCIO w.r.t. VSS.....................................................................................................................................-0.6V to VCC+1.0V  
Storage temperature .................................................................................................................................-65°C to 150°C  
Ambient temperature under bias...............................................................................................................-40°C to 125°C  
ESD protection on all pins..........................................................................................................................................4 kV  
NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above those  
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an  
extended period of time may affect device reliability.  
TABLE 1-1:  
DC CHARACTERISTICS  
Electrical Characteristics:  
Industrial (I):  
Automotive (E):  
Min.  
VCC = 2.5V to 5.5V  
VCC = 1.8V to 2.5V  
VCC = 2.5V to 5.5V  
TA = -40°C to +85°C  
TA = -20°C to +85°C  
TA = -40°C to +125°C  
DC CHARACTERISTICS  
Param.  
No.  
Sym.  
Characteristic  
Max.  
VCC+1  
Units  
Test Conditions  
D1  
VIH  
High-level input  
voltage  
0.7*VCC  
V
D2  
D3  
D4  
D5  
D6  
D7  
D8  
VIL  
VHYS  
VOH  
VOL  
IO  
Low-level input  
voltage  
-0.3  
-0.3  
0.3*VCC  
0.2*VCC  
V
V
VCC2.5V  
VCC < 2.5V  
Hysteresis of Schmitt 0.05*Vcc  
Trigger inputs (SCIO)  
V
VCC2.5V (Note 1)  
High-level output  
voltage  
VCC -0.5  
VCC -0.5  
V
V
IOH = -300 A, VCC = 5.5V  
IOH = -200 A, Vcc = 2.5V  
Low-level output  
voltage  
0.4  
0.4  
V
V
IOI = 300 A, VCC = 5.5V  
IOI = 200 A, Vcc = 2.5V  
Output current limit  
(Note 2)  
±4  
±3  
mA  
mA  
VCC = 5.5V (Note 1)  
Vcc = 2.5V (Note 1)  
ILI  
Input leakage current  
(SCIO)  
±1  
A  
VIN = VSS or VCC  
CINT  
Internal Capacitance  
(all inputs and  
outputs)  
7
pF  
TA = 25°C, FCLK = 1 MHz,  
VCC = 5.0V (Note 1)  
D9  
ICC Read Read Operating  
Current  
3
1
mA  
mA  
VCC=5.5V; FBUS=100 kHz, CB=100 pF  
VCC=2.5V; FBUS=100 kHz, CB=100 pF  
D10 ICC Write Write Operating  
Current  
5
3
mA  
mA  
VCC = 5.5V  
VCC = 2.5V  
D11  
Iccs  
Standby Current  
5
A  
VCC = 5.5V  
TA = 125°C  
1
A  
A  
VCC = 5.5V  
TA = 85°C  
D12  
ICCI  
Idle Mode Current  
50  
VCC = 5.5V  
Note 1: This parameter is periodically sampled and not 100% tested.  
2: The SCIO output driver impedance will vary to ensure IO is not exceeded.  
2010 Microchip Technology Inc.  
Preliminary  
DS22067H-page 3  

与11LC020T-IMS相关器件

型号 品牌 描述 获取价格 数据表
11LC020T-IP MICROCHIP 1K-16K UNI/O® Serial EEPROM Family Data Sheet

获取价格

11LC020T-ISN MICROCHIP 1K-16K UNI/O® Serial EEPROM Family Data Sheet

获取价格

11LC020T-ITO MICROCHIP 1K-16K UNI/O® Serial EEPROM Family Data Sheet

获取价格

11LC020T-ITT MICROCHIP 1K-16K UNI/O® Serial EEPROM Family Data Sheet

获取价格

11LC021-ECS16K MICROCHIP 1K-16K UNI/O® Serial EEPROM Family Data Sheet

获取价格

11LC021-EMNY MICROCHIP 1K-16K UNI/O® Serial EEPROM Family Data Sheet

获取价格