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11AA161-I/MNY

更新时间： 2023-01-03 00:41:54
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数 文件大小 规格书
48页 747K
描述
2K X 8 1-WIRE SERIAL EEPROM, PDSO8, 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8

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11AA161-I/MNY 数据手册

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11XX  
1.0  
ELECTRICAL CHARACTERISTICS  
(†)  
Absolute Maximum Ratings  
VCC.............................................................................................................................................................................6.5V  
SCIO w.r.t. VSS.....................................................................................................................................-0.6V to VCC+1.0V  
Storage temperature .................................................................................................................................-65°C to 150°C  
Ambient temperature under bias...............................................................................................................-40°C to 125°C  
ESD protection on all pins..........................................................................................................................................4 kV  
† NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the  
device. This is a stress rating only and functional operation of the device at those or any other conditions above those  
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an  
extended period of time may affect device reliability.  
TABLE 1-1:  
DC CHARACTERISTICS  
Electrical Characteristics:  
Industrial (I):  
Automotive (E):  
Min.  
VCC = 2.5V to 5.5V  
VCC = 1.8V to 2.5V  
VCC = 2.5V to 5.5V  
TA = -40°C to +85°C  
TA = -20°C to +85°C  
TA = -40°C to +125°C  
DC CHARACTERISTICS  
Param.  
No.  
Sym.  
Characteristic  
Max.  
VCC+1  
Units  
Test Conditions  
D1  
VIH  
High-level input  
voltage  
0.7*VCC  
V
D2  
D3  
D4  
D5  
D6  
D7  
D8  
VIL  
VHYS  
VOH  
VOL  
IO  
Low-level input  
voltage  
-0.3  
-0.3  
0.3*VCC  
0.2*VCC  
V
V
VCC2.5V  
VCC < 2.5V  
Hysteresis of Schmitt 0.05*Vcc  
Trigger inputs (SCIO)  
—
V
VCC2.5V (Note 1)  
High-level output  
voltage  
VCC -0.5  
VCC -0.5  
—
—
V
V
IOH = -300 A, VCC = 5.5V  
IOH = -200 A, Vcc = 2.5V  
Low-level output  
voltage  
—
—
0.4  
0.4  
V
V
IOI = 300 A, VCC = 5.5V  
IOI = 200 A, Vcc = 2.5V  
Output current limit  
(Note 2)  
—
—
±4  
±3  
mA  
mA  
VCC = 5.5V (Note 1)  
Vcc = 2.5V (Note 1)  
ILI  
Input leakage current  
(SCIO)  
—
±1  
A  
VIN = VSS or VCC  
CINT  
Internal Capacitance  
(all inputs and  
outputs)  
—
7
pF  
TA = 25°C, FCLK = 1 MHz,  
VCC = 5.0V (Note 1)  
D9  
ICC Read Read Operating  
Current  
—
—
3
1
mA  
mA  
VCC=5.5V; FBUS=100 kHz, CB=100 pF  
VCC=2.5V; FBUS=100 kHz, CB=100 pF  
D10 ICC Write Write Operating  
Current  
—
—
5
3
mA  
mA  
VCC = 5.5V  
VCC = 2.5V  
D11  
Iccs  
Standby Current  
—
5
A  
VCC = 5.5V  
TA = 125°C  
—
—
1
A  
A  
VCC = 5.5V  
TA = 85°C  
D12  
ICCI  
Idle Mode Current  
50  
VCC = 5.5V  
Note 1: This parameter is periodically sampled and not 100% tested.  
2: The SCIO output driver impedance will vary to ensure IO is not exceeded.  
2011 Microchip Technology Inc.  
DS22067J-page 3  
1234567...48

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