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11AA160T-E/TT PDF预览

11AA160T-E/TT

更新时间: 2024-01-13 23:34:08
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
38页 571K
描述
1K-16K UNI/O® Serial EEPROM Family Data Sheet

11AA160T-E/TT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:TSSOP, TO-236针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:15 weeks
风险等级:1.23最大时钟频率 (fCLK):1 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
长度:2.9 mm内存密度:16384 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:3字数:2048 words
字数代码:2000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TO-236
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.12 mm串行总线类型:1-WIRE
最大待机电流:0.000005 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:1.3 mm最长写入周期时间 (tWC):10 ms
写保护:SOFTWAREBase Number Matches:1

11AA160T-E/TT 数据手册

 浏览型号11AA160T-E/TT的Datasheet PDF文件第1页浏览型号11AA160T-E/TT的Datasheet PDF文件第2页浏览型号11AA160T-E/TT的Datasheet PDF文件第3页浏览型号11AA160T-E/TT的Datasheet PDF文件第5页浏览型号11AA160T-E/TT的Datasheet PDF文件第6页浏览型号11AA160T-E/TT的Datasheet PDF文件第7页 
11AAXXX/11LCXXX  
TABLE 1-2:  
AC CHARACTERISTICS  
Electrical Characteristics:  
Industrial (I):  
VCC = 2.5V to 5.5V  
VCC = 1.8V to 2.5V  
VCC = 2.5V to 5.5V  
TA = -40°C to +85°C  
TA = -20°C to +85°C  
TA = -40°C to +125°C  
AC CHARACTERISTICS  
Automotive (E):  
Param.  
No.  
Sym.  
Characteristic  
Min.  
Max.  
Units  
Test Conditions  
1
2
3
4
FBUS Serial bus frequency  
10  
10  
100  
100  
kHz  
µs  
TE  
Bit period  
TIJIT Input edge jitter tolerance  
±0.08  
±0.75  
UI  
(Note 3)  
FDRIFT Serial bus frequency drift  
rate tolerance  
% per byte —  
5
FDEV Serial bus frequency drift  
limit  
±5  
% per  
command  
6
7
TOJIT Output edge jitter  
±0.25  
100  
UI  
ns  
(Note 3)  
TR  
SCIO input rise time  
(Note 1)  
8
TF  
SCIO input fall time  
100  
ns  
(Note 1)  
9
TSTBY Standby pulse time  
600  
10  
5
µs  
µs  
µs  
10  
11  
TSS Start header setup time  
THDR Start header low pulse  
time  
12  
13  
14  
TSP Input filter spike  
suppression (SCIO)  
50  
ns  
(Note 1)  
TWC Write cycle time  
(byte or page)  
5
10  
ms  
ms  
Write, WRSR commands  
ERAL, SETAL commands  
Endurance (per page)  
1M  
cycles  
25°C, VCC = 5.5V (Note 2)  
Note 1: This parameter is periodically sampled and not 100% tested.  
2: This parameter is not tested but ensured by characterization. For endurance estimates in a specific  
application, please consult the Total EnduranceModel which can be obtained on Microchip’s web site:  
www.microchip.com.  
3: A Unit Interval (UI) is equal to 1-bit period (TE) at the current bus frequency.  
TABLE 1-3:  
AC TEST CONDITIONS  
AC Waveform:  
VLO = 0.2V  
VHI = VCC - 0.2V  
CL = 100 pF  
Timing Measurement Reference Level  
Input  
0.5 VCC  
0.5 VCC  
Output  
DS22067E-page 4  
Preliminary  
© 2008 Microchip Technology Inc.  

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