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112MT140KB PDF预览

112MT140KB

更新时间: 2024-02-21 16:57:41
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极局域网
页数 文件大小 规格书
9页 115K
描述
THREE PHASE CONTROLLED BRIDGE

112MT140KB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X9
针数:9Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.71
Is Samacsys:N其他特性:UL RECOGNIZED
外壳连接:ISOLATED配置:3 PHASE BRIDGE, HALF-CONTROLLED, COMMON CATHODE
最大直流栅极触发电流:150 mA最大直流栅极触发电压:4 V
快速连接描述:3G螺丝端子的描述:3AK-2CA-CK
最大维持电流:200 mAJESD-30 代码:R-XUFM-X9
最大漏电流:20 mA通态非重复峰值电流:1180 A
元件数量:3端子数量:9
最大通态电流:110000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
断态重复峰值电压:1400 V重复峰值反向电压:1400 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

112MT140KB 数据手册

 浏览型号112MT140KB的Datasheet PDF文件第1页浏览型号112MT140KB的Datasheet PDF文件第2页浏览型号112MT140KB的Datasheet PDF文件第4页浏览型号112MT140KB的Datasheet PDF文件第5页浏览型号112MT140KB的Datasheet PDF文件第6页浏览型号112MT140KB的Datasheet PDF文件第7页 
53-93-113MT..KB Series  
Bulletin I27503 08/97  
Blocking  
53MT.KB 93MT.KB 113MT.KB  
Parameter  
52MT.KB 92MT.KB 112MT.KB Units Conditions  
51MT.KB 91MT.KB 111MT.KB  
VINS RMS isolation voltage  
4000  
V
TJ = 25oC all terminal shorted  
f = 50Hz, t = 1s  
dv/dt Max. critical rate of rise  
of off-state voltage (*)  
500  
V/µs TJ = TJ max., linear to 0.67 VDRM  
gate open circuit  
,
(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.  
Triggering  
53MT.KB 93MT.KB 113MT.KB  
Parameter  
52MT.KB 92MT.KB 112MT.KB Units Conditions  
51MT.KB 91MT.KB 111MT.KB  
PGM Max. peak gate power  
10  
W
TJ = TJ max.  
PG(AV) Max. average gate power  
2.5  
IGM  
Max. peak gate current  
2.5  
10  
A
V
-VGT Max. peak negative  
gate voltage  
VGT Max. required DC gate  
voltage to trigger  
4.0  
2.5  
V
TJ=-40°C  
TJ= 25°C Anodesupply=6V,resistiveload  
1.7  
TJ= 125°C  
TJ=-40°C  
IGT  
Max. required DC gate  
current to trigger  
270  
150  
80  
mA TJ= 25°C Anodesupply=6V,resistiveload  
TJ =125°C  
VGD Max. gate voltage  
that will not trigger  
0.25  
V
@ TJ = TJ max., ratedVDRMapplied  
IGD  
Max. gate current  
that will not trigger  
6
mA  
Thermal and Mechanical Specifications  
53MT.KB 93MT.KB 113MT.KB  
Parameter  
52MT.KB 92MT.KB 112MT.KB Units Conditions  
51MT.KB 91MT.KB 111MT.KB  
TJ  
Max. junction operating  
temperature range  
-40 to 125  
°C  
Tstg  
Max. storage temperature  
range  
-40 to 125  
°C  
RthJC Max. thermal resistance,  
junction to case  
0.18  
1.07  
0.19  
1.17  
0.14  
0.86  
0.15  
0.91  
0.03  
0.12  
0.70  
0.12  
0.74  
K/W DC operation per module  
DC operation per junction  
120° Rect condunction angle per module  
120° Rect condunction angle per junction  
RthCS Max. thermal resistance,  
case to heatsink  
K/W Per module  
Mounting surface smooth, flat an greased  
A mounting compound is recommended and the  
Nm  
T
Mounting  
to heatsink  
to terminal  
4 to 6  
3 to 4  
225  
torque should be rechecked after a period of 3  
hoursto allow for the spread of the compound.  
torque ± 10%  
Lubricatedthreads.  
g
wt  
Approximate weight  
3
www.irf.com  

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