Datasheet > 1103XFREQ2BF

1103XFREQ2BF

更新时间： 2024-02-13 18:21:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		机械振荡器
页数	文件大小	规格书
22页	453K
描述
ACMOS Output Clock Oscillator, 12MHz Min, 100MHz Max, PLASTIC, FLAT PACKAGE-16

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1103XFREQ2BF 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.69	最长下降时间：	5 ns
频率调整-机械：	NO	频率稳定性：	50%
JESD-609代码：	e4	安装特点：	THROUGH HOLE MOUNT
最大工作频率：	100 MHz	最小工作频率：	12 MHz
最高工作温度：	125 °C	最低工作温度：	-55 °C
振荡器类型：	ACMOS	输出负载：	10 KOHM, 15 pF
物理尺寸：	12.83mm x 9.78mm x 3.0mm	最长上升时间：	5 ns
标称供电电压：	3.3 V	表面贴装：	NO
最大对称度：	60/40 %	端子面层：	GOLD
Base Number Matches：	1

1103XFREQ2BF 数据手册

3.2

3.3

Item Identification. External packaging choices are of metal flatpacks, DIP’s and ceramic J-

lead 9x14mm and LCC’s with either TTL or ACMOS logic output. Unique Model Number

Series’ are utilized to identify device package configurations and output logic as listed in Table

Absolute Maximum Ratings.

a. Supply Voltage Range (V_CC):

b. Storage Temperature Range (T_STG):

c. Junction Temperature (T_J):

-0.5Vdc to +7.0Vdc

-65°C to +125°C

+175°C

d. Lead Temperature (soldering, 10 seconds):

e. Output Source/Sink Current

+300°C

70 mA

3.4

Design, Parts, Materials and Processes, Assembly, Inspection and Test.

3.4.1 Design. The ruggedized designs implemented for these devices are proven in military and

space applications under extreme environments. Designs utilize 4-point crystal mounting in

compliment with Established Reliability (MIL-ER) componentry. When specified, radiation

hardening up to 100krad(Si) (RHA level R) can be included without altering the device’s

internal topography.

3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselecting

passive chip component values to offset component tolerances, there will not be fundamental

changes to the design or assembly or parts, materials and processes after first product delivery

of that item without written approval from the procuring activity.

3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-

PRF-55310. These designs have also passed extended dynamic levels of at least:

Sine Vibration: MIL-STD-202, Method 204, Condition G (30g pk.)

Random Vibration: MIL-STD-202, Method 214, Condition II-J (43.92g rms)

Mechanical Shock: MIL-STD-202, Method 213, Condition F (1500g, 0.5ms)

3.4.2 Prohibited Parts, Materials and Processes. The items listed are prohibited for use in high

reliability devices produced to this specification.

a. Gold metallization of package elements without a barrier metal.

b. Zinc chromate as a finish.

c. Cadmium, zinc, or pure tin external or internal to the device.

d. Plastic encapsulated semiconductor devices.

e. Ultrasonically cleaned electronic parts.

f. Heterojunction Bipolar Transistor (HBT) technology.

g. ‘getter’ materials

3.4.3 Assembly. Manufacturing utilizes standardized procedures, processes and verification

methods to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices.

MIL-PRF-38534 Group B Option 1 in-line inspection is included on radiation hardened part

numbers to further verify lot pedigree. Traceability of all components and production lots are

CODE IDENT NO.

UNSPECIFIED TOLERANCES

SIZE

DWG NO.

REV.

SHEET

00136

N/A

OS-68338

1 234 5 6 7...22

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