RoHS
10PT Series RoHS
SEMICONDUCTOR
Stansard SCRs, 10A
Main Features
2
2
Symbol
Value
10
Unit
IT(RMS)
A
2
1
1
3
2
VDRM/VRRM
IGT
V
600 to 1000
15
3
TO-251 (I-PAK)
TO-252 (D-PAK)
mA
(10PTxxF)
(10PTxxG)
2
DESCRIPTION
The 10PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
designed for power supply up to 400Hz on resistive or
inductive load.
1
1
2
2
3
3
TO-220AB (Non-lnsulated)
TO-220AB (lnsulated)
(10PTxxAI)
(10PTxxA)
2
(A2)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
TEST CONDITIONS
VALUE
UNIT
PARAMETER
SYMBOL
Tc=100°C
Tc=90°C
Tc=100°C
TO-251/TO-252/TO-220AB
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
A
10
TO-220AB insulated
TO-251/TO-252/TO-220AB
Average on-state current
(180° conduction angle)
IT(AV)
6.4
A
TO-220AB insulated
F =50 Hz
Tc=90°C
t = 20 ms
100
105
50
Non repetitive surge peak on-state
ITSM
A
current (full cycle, T initial = 25°C)
j
F =60 Hz
t = 16.7 ms
I2t Value for fusing
A2s
A/µs
I2t
tp = 10 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
F = 60 Hz
dI/dt
IGM
Tj = 125ºC
50
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Peak gate current
4
10
1
A
Maximum gate power
PGM
W
W
PG(AV)
Average gate power dissipation
Repetitive peak off-state voltage
VDRM
VRRM
Tstg
600 to 1000
V
Tj =125ºC
Repetitive peak reverse voltage
Storage temperature range
- 40 to + 150
- 40 to + 125
ºC
Tj
Operating junction temperature range
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