VS-10CWH02FN-M3
Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt®
40
35
30
180
170
5A, Tj = 125°C
DC
25
20
15
10
5
160
150
140
Square wave (D=0.50)
rated Vr applied
5A, Tj = 25°C
see note (1)
0
1
2
3
4
5
6
7
8
AverageForwardCurrent-I
F
(AV)(A)
0
100
1000
di F /dt (A/μs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
70
60
6
5.5
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
RMS Limit
50
40
30
20
10
0
5A, Tj = 125°C
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
3
5A, Tj = 25°C
0
1
2
4
5
6
7
8
AverageForwardCurrent-IF(AV)(A)
100
1000
diF/dt (A/μs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
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4
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DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93263
Revision: 31-Mar-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000