Datasheet > 100H3LL-

100H3LL-

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		转换器
页数	文件大小	规格书
11页	460K
描述
N-CHANNEL 30 V - 0.0032 ohm - 25 A PowerSO-8 STripFET III MOSFET FOR DC-DC CONVERSION

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100H3LL- 数据手册

STSJ100NH3LL

Table 3: Absolute Maximum ratings

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Gate- source Voltage

± 16

100

I (2)

Drain Current (continuous) at T = 25°C

I (1)

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

15.6

100

(3)

(2)

(1)

Drain Current (pulsed)

Total Dissipation at T = 25°C

tot

Total Dissipation at T = 25°C

Table 4: Thermal Data

Rthj-c

Rthj-pcb(4)

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Maximum Operating Junction Temperature

Storage Temperature

Max

1.8

150

°C/W

°C

stg

-55 to 150

°C

Table 5: Avalanche Characteristics

Symbol

Parameter

Max Value

Unit

Not-Repetitive Avalanche Current

12.5

(pulse width limited by T max)

Single Pulse Avalanche Energy

1.3

(starting T = 25 °C, I = I , V = 24 V)

AV DD

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

Table 6: On /Off

Symbol

Parameter

Test Conditions

= 250µA, V = 0

Min.

Typ.

Max.

Unit

Drain-source

(BR)DSS

Breakdown Voltage

Zero Gate Voltage

= Max Rating

µA

DSS

Drain Current (V = 0)

=Max Rating ,T = 125°C

Gate-body Leakage

= ± 16V

±100

GSS

Current (V = 0)

GS(th)

= V , I = 250µA

Gate Threshold Voltage

= 10V, I = 12.5A

Static Drain-source On

Resistance

0.0032

0.004

0.0035

0.005

Ω

DS(on)

= 4.5V, I = 12.5A

2/11

123 4 5 6 7...11

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