Datasheet > 100GT120DN2

100GT120DN2

更新时间： 2022-01-19 03:45:00

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
9页	302K
描述
IGBT Module

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数据手册

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100GT120DN2 数据手册

BSM 100 GT 120 DN2

Typ. switching time

I = f (I ) , inductive load , T = 125°C

t = f (R ) , inductive load , T = 125°C

par.: V = 600 V, V = ± 15 V, R = 6.8

par.: V = 600 V, V = ± 15 V, I = 100 A

Ω

10 ³

10 ⁴

tdoff

10 ³

tdoff

tdon

10 ²

tdon

10 ²

10 ¹

100

150

250

Ω

I_C

R_G

Typ. switching losses

E = f (I ) , inductive load , T = 125°C

Typ. switching losses

E = f (R ) , inductive load , T = 125°C

par.: V = 600 V, V = ± 15 V, R = 6.8 Ω

par.: V = 600V, V = ± 15 V, I = 100 A

Eon

mWs

Eon

Eoff

100

150

250

Ω

I_C

R_G

Oct-21-1997

1...4 5 678 9

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