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100364F

更新时间： 2024-02-09 19:24:03
品牌 Logo 应用领域
美国国家半导体 - NSC 复用器
页数 文件大小 规格书
8页 128K
描述
Low Power 16-Input Multiplexer

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100364F 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：QFF, QFL24,.4SQReach Compliance Code：unknown
风险等级：5.83JESD-30 代码：S-XQFP-F24
JESD-609代码：e0逻辑集成电路类型：MULTIPLEXER
功能数量：1输入次数：16
端子数量：24最高工作温度：125 °C
最低工作温度：-55 °C封装主体材料：CERAMIC
封装代码：QFF封装等效代码：QFL24,.4SQ
封装形状：SQUARE封装形式：FLATPACK
电源：-4.5 V最大电源电流（ICC）：95 mA
Prop。Delay @ Nom-Sup：2.8 ns认证状态：Not Qualified
筛选级别：38535Q/M;38534H;883B子类别：Multiplexer/Demultiplexers
表面贴装：YES技术：ECL100K
温度等级：MILITARY端子面层：Tin/Lead (Sn/Pb)
端子形式：FLAT端子节距：1.27 mm
端子位置：QUADBase Number Matches：1

100364F 数据手册

 浏览型号100364F的Datasheet PDF文件第1页浏览型号100364F的Datasheet PDF文件第2页浏览型号100364F的Datasheet PDF文件第3页浏览型号100364F的Datasheet PDF文件第5页浏览型号100364F的Datasheet PDF文件第6页浏览型号100364F的Datasheet PDF文件第7页 
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Output Current  
(DC Output HIGH)  
ESD (Note 2)  
−50 mA  
≥ 2000V  
Recommended Operating  
Conditions  
Case Temperature (TC)  
Military  
Above which the useful life may be impaired  
Storage Temperature (TSTG  
)
−65˚C to +150˚C  
Maximum Junction Temperature (TJ)  
Ceramic  
+175˚C  
−55˚C to +125˚C  
−5.7V to −4.2V  
Pin Potential to  
Supply Voltage (VEE  
)
Ground Pin (VEE  
)
−7.0V to +0.5V  
VEE to +0.5V  
Note 1: Absolute maximum ratings are those values beyond which the de-  
vice may be damaged or have its useful life impaired. Functional operation  
under these conditions is not implied.  
Input Voltage (DC)  
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.  
Military Version  
DC Electrical Characteristics  
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C  
Symbol  
Parameter  
Min  
Max  
Units  
TC  
Conditions  
Notes  
=
VOH  
Output HIGH Voltage  
−1025  
−870  
mV  
0˚C to  
VIN VIH (Max)  
Loading with  
(Notes 3, 4,  
5)  
+125˚C  
−55˚C  
or VIL (Min)  
50Ω to −2.0V  
−1085  
−870  
mV  
mV  
VOL  
Output LOW Voltage  
Output HIGH Voltage  
Output LOW Voltage  
−1830 −1620  
0˚C to  
+125˚C  
−55˚C  
−1830 −1555  
−1035  
mV  
mV  
=
VOHC  
0˚C to  
VIN VIH (Min)  
Loading with  
(Notes 3, 4,  
5)  
+125˚C  
−55˚C  
or VIL (Max)  
50Ω to −2.0V  
−1085  
−1610  
mV  
mV  
VOLC  
0˚C to  
+125˚C  
−55˚C  
−1555  
mV  
mV  
VIH  
VIL  
IIL  
Input HIGH Voltage  
Input LOW Voltage  
Input LOW Current  
Input HIGH Current  
−1165  
−870  
−55˚C to  
+125˚C  
−55˚C to  
+125˚C  
−55˚C to  
+125˚C  
0˚C to  
Guaranteed HIGH Signal  
for All Inputs  
(Notes 3, 4,  
5, 6)  
−1830 −1475  
mV  
µA  
µA  
Guaranteed LOW Signal  
for All Inputs  
(Notes 3, 4,  
5, 6)  
=
0.50  
300  
450  
VEE −4.2V  
(Notes 3, 4,  
5)  
=
VIN VIL (Min)  
=
IIH  
VEE −5.7V  
(Notes 3, 4,  
5)  
=
+125˚C  
−55˚C  
VIN VIH (Max)  
µA  
IEE  
Power Supply Current  
−95  
−35  
mA  
−55˚C to  
+125˚C  
Inputs Open  
(Notes 3, 4,  
5)  
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case  
condition at cold temperatures.  
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups, 1, 2, 3, 7 and 8.  
Note 5: Sampled tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7 and 8.  
Note 6: Guaranteed by applying specified input condition and testing V /V  
.
OH OL  
www.national.com  
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