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100355F

更新时间： 2024-02-12 18:20:46
品牌 Logo 应用领域
美国国家半导体 - NSC 复用器锁存器
页数 文件大小 规格书
10页 152K
描述
Low Power Quad Multiplexer/Latch

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100355F 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：QFF, QFL24,.4SQReach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
JESD-30 代码：S-XQFP-F24JESD-609代码：e0
逻辑集成电路类型：MULTIPLEXER功能数量：4
输入次数：2端子数量：24
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：CERAMIC封装代码：QFF
封装等效代码：QFL24,.4SQ封装形状：SQUARE
封装形式：FLATPACK电源：-4.5 V
最大电源电流（ICC）：95 mAProp。Delay @ Nom-Sup：2.6 ns
认证状态：Not Qualified筛选级别：38535Q/M;38534H;883B
子类别：Multiplexer/Demultiplexers表面贴装：YES
技术：ECL100K温度等级：MILITARY
端子面层：Tin/Lead (Sn/Pb)端子形式：FLAT
端子节距：1.27 mm端子位置：QUAD
Base Number Matches：1

100355F 数据手册

 浏览型号100355F的Datasheet PDF文件第1页浏览型号100355F的Datasheet PDF文件第2页浏览型号100355F的Datasheet PDF文件第3页浏览型号100355F的Datasheet PDF文件第5页浏览型号100355F的Datasheet PDF文件第6页浏览型号100355F的Datasheet PDF文件第7页 
Absolute Maximum Ratings (Note 2)  
ESD (Note 3)  
≥2000V  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications. Above  
which the useful life may be impaired.  
Recommended Operating  
Conditions  
Case Temperature (TC)  
Military  
Storage Temperature (TSTG  
)
−65˚C to +150˚C  
−55˚C to +125˚C  
−5.7V to −4.2V  
Maximum Junction Temperature (TJ)  
Ceramic  
Supply Voltage (VEE  
)
+175˚C  
−7.0V to +0.5V  
VEE to +0.5V  
−50 mA  
Note 2: Absolute maximum ratings are those values beyond which the de-  
vice may be damaged or have its useful life impaired. Functional operation  
under these conditions is not implied.  
VEE Pin Potential to Ground Pin  
Input Voltage (DC)  
Note 3: ESD testing conforms to MIL-STD-883, Method 3015.  
Output Current (DC Output HIGH)  
Military Version  
DC Electrical Characteristics  
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C  
Symbol  
Parameter  
Min  
Max  
Units  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
mV  
TC  
0˚C to +125˚C  
−55˚C  
Conditions  
Notes  
VOH  
Output HIGH Voltage −1025 −870  
−1085 −870  
=
VIN VIH (Max)  
Loading with  
(Notes 4, 5,  
6)  
VOL  
Output LOW Voltage  
−1830 −1620  
−1830 −1555  
0˚C to +125˚C  
−55˚C  
or VIL (Min)  
50Ω to −2.0V  
VOHC Output HIGH Voltage −1035  
−1085  
0˚C to +125˚C  
−55˚C  
=
VIN VIH (Min)  
Loading with  
(Notes 4, 5,  
6)  
VOLC  
VIH  
VIL  
IIL  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage  
Input LOW Current  
−1610  
−1555  
0˚C to +125˚C  
−55˚C  
or VIL (Max)  
50Ω to −2.0V  
−1165 −870  
−55˚C to  
+125˚C  
Guaranteed HIGH Signal  
for ALL Inputs  
(Notes 4, 5,  
6, 7)  
−1830 −1475  
0.50  
mV  
µA  
−55˚C to  
+125˚C  
Guaranteed LOW Signal  
for ALL Inputs  
(Notes 4, 5,  
6, 7)  
=
VEE −4.2V  
−55˚C to  
+125˚C  
(Notes 4, 5,  
6)  
=
VIN VIL (Min)  
IIH  
Input HIGH Current  
S0, S1  
220  
350  
340  
430  
320  
500  
490  
630  
E1, E2  
µA  
0˚C to +125˚C  
=
VEE −5.7V  
D
na–Dnd  
=
VIN VIH (Max)  
MR  
(Notes 4, 5,  
6)  
S0, S1  
E1, E2  
µA  
−55˚C  
D
na–Dnd  
MR  
IEE  
Power Supply Current  
−95  
−32  
mA  
−55˚C to +125˚C Inputs Open  
(Notes 4, 5,  
6)  
Note 4: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case  
condition at cold temperatures.  
Note 5: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C Temp., Subgroups 1, 2, 3, 7, and 8.  
Note 6: Sample tested (Method 5005, Table 1) on each Mfg. lot at +25˚, +125˚C, and −55˚C Temp., Subgroups 1, 2, 3, 7, and 8.  
Note 7: Guaranteed by applying specified input condition and testing V /V  
.
OH OL  
www.national.com  
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