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100325FM

更新时间： 2024-02-28 06:49:25
品牌 Logo 应用领域
美国国家半导体 - NSC 转换器
页数 文件大小 规格书
8页 129K
描述
IC HEX ECL TO TTL TRANSLATOR, TRUE OUTPUT, CQFP24, CERAMIC, QFP-24, Level Translator

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100325FM 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOIC包装说明：0.300 INCH, MS-013, SOIC-24
针数：24Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.54最大延迟：4.3 ns
接口集成电路类型：ECL TO TTL TRANSLATORJESD-30 代码：R-PDSO-G24
JESD-609代码：e3长度：15.4 mm
湿度敏感等级：1位数：1
功能数量：6端子数量：24
最高工作温度：85 °C最低工作温度：
输出特性：TOTEM-POLE输出锁存器或寄存器：NONE
输出极性：TRUE封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP24,.4
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260电源：5,-4.5 V
认证状态：Not Qualified座面最大高度：2.65 mm
子类别：Level Translators最大供电电压：5.5 V
最小供电电压：4.5 V标称供电电压：5 V
表面贴装：YES技术：ECL
温度等级：OTHER端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：7.5 mmBase Number Matches：1

100325FM 数据手册

 浏览型号100325FM的Datasheet PDF文件第1页浏览型号100325FM的Datasheet PDF文件第2页浏览型号100325FM的Datasheet PDF文件第4页浏览型号100325FM的Datasheet PDF文件第5页浏览型号100325FM的Datasheet PDF文件第6页浏览型号100325FM的Datasheet PDF文件第7页 
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Voltage Applied to Output  
=
in HIGH State (with VCC 0V)  
Current Applied to Output  
in LOW State (Max)  
−0.5V to VCC  
twice the rated IOL (mA)  
Above which the useful life may be impaired.  
ESD (Note 2)  
≥2000V  
Storage Temperature (TSTG  
)
−65˚C to +150˚C  
Recommended Operating  
Conditions  
Case Temperature (TC)  
Military  
Maximum Junction Temperature (TJ)  
Ceramic  
+175˚C  
−7.0V to +0.5V  
−0.5V to +6.0V  
VEE to +0.5V  
VEE Pin Potential to Ground Pin  
VTTL Pin Potential to Ground Pin  
Input Voltage (DC)  
−55˚C to +125˚C  
−5.7V to −4.2V  
Supply Voltage (VEE  
)
Note 1: Absolute maximum ratings are those values beyond which the de-  
vice may be damaged or have its useful life impaired. Functional operation  
under these conditions is not implied.  
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.  
Military Version  
DC Electrical Characteristics  
=
=
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C, CL 50 pF, VTTL +4.5V to +5.5V  
Symbol  
Parameter  
Min  
Max  
Units  
TC  
Conditions  
Notes  
= =  
IVBB −3 µA, VEE −4.2V  
VBB  
Output Reference Voltage  
−1380 −1260  
0˚C to +125˚C  
(Notes 3,  
4, 5)  
=
=
VEE −5.7V  
mV  
IVBB −2.1 mA  
=
IVBB −3 mA  
−1396 −1260  
−55˚C  
VIH  
VIL  
Input HIGH Voltage  
Input LOW Voltage  
Output HIGH Voltage  
−1165  
−870  
mV  
−55˚C to +125˚C Guaranteed HIGH Signal for All Inputs  
(with One Input Tied to VBB  
−55˚C to +125˚C Guaranteed LOW Signal for All Inputs  
(with One Input Tied to VBB  
(Notes 3,  
4, 5, 6)  
)
−1830 −1475  
mV  
(Notes 3,  
4, 5, 6)  
)
=
=
VOH  
2.5  
2.4  
0.5  
150  
mV  
0˚C to +125˚C  
−55˚C  
IOH −2.0 mA  
VIN VIH  
(Max)  
(Notes 3,  
4, 5)  
or VIL (Min)  
=
−55˚C to +125˚C IOL 20 mA  
VOL  
Output LOW Voltage  
mV  
mV  
VDIFF  
Input Voltage Differential  
−55˚C to +125˚C Required for Full Output Swing  
−55˚C to +125˚C  
(Notes 3,  
4, 5)  
VCM  
Common Mode Voltage  
Input HIGH Current  
Input LOW Current  
−2000  
−500  
mV  
µA  
(Notes 3,  
4, 5, 6)  
= =  
VIN VIH (Max), D0–D5 VBB ,  
IIH  
350  
500  
0˚C to +125˚C  
−55˚C  
(Notes 3,  
4, 5)  
=
D0–D5 VIL  
(Min)  
=
=
IIL  
0.50  
µA  
−55˚C to +125˚C VIN VIL  
D0–D5 VBB  
(Notes 3,  
4, 5)  
(Min),  
=
IOS  
Output Short Circuit  
Current  
−150  
−60  
250  
mA  
−55˚C to +125˚C VOUT GND  
(Notes 3,  
4, 5)  
Test One Output at a Time  
=
−55˚C to +125˚C VOUT 5.5V  
ICEX  
Output HIGH  
µA  
(Notes 3,  
4, 5)  
Leakage Current  
VEE Power Supply Current  
=
IEE  
−35  
−12  
65  
mA  
mA  
−55˚C to +125˚C D0–D5 VBB  
(Notes 3,  
4, 5)  
=
ITTL  
VTTL Power Supply Current  
−55˚C to +125˚C D0–D5 VBB  
(Notes 3,  
4, 5)  
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case  
condition at cold temperatures.  
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.  
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, + 25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.  
Note 6: Guaranteed by applying specified input condition and testing V /V  
.
OH OL  
3
www.national.com  
12345678

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