10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gateꢀemitter threshold voltage
VGE = VCE
0,00085 25
25
5,3
5,8
6,3
V
V
1,78
1,98
2,38
2,49
2,42
Collectorꢀemitter saturation voltage
VCEsat
15
25
125
150
ICES
IGES
rg
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2,4
µA
nA
ꢁ
20
120
none
1430
115
75
Cies
Coes
Cres
Output capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,01
K/W
IGBT Dynamic
25
127
130
130
35
td(on)
125
150
25
Turnꢀon delay time
Rgoff = 32 ꢁ
Rgon = 32 ꢁ
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
37
37
210
265
277
49
ns
td(off)
Turnꢀoff delay time
Fall time
±15
600
25
tf
93
104
1,939
2,581
2,863
1,005
1,689
1,881
Qr
FWD
Qr
FWD
Qr
FWD
= 1,6 ꢂC
= 3,1 ꢂC
= 4 ꢂC
Eon
Turnꢀon energy (per pulse)
Turnꢀoff energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
3
08 Jul. 2016 / Revision 1