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10-FZ06NBA050SA-P915L33 PDF预览

10-FZ06NBA050SA-P915L33

更新时间: 2023-09-03 20:37:22
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
20页 6895K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

10-FZ06NBA050SA-P915L33 数据手册

 浏览型号10-FZ06NBA050SA-P915L33的Datasheet PDF文件第4页浏览型号10-FZ06NBA050SA-P915L33的Datasheet PDF文件第5页浏览型号10-FZ06NBA050SA-P915L33的Datasheet PDF文件第6页浏览型号10-FZ06NBA050SA-P915L33的Datasheet PDF文件第8页浏览型号10-FZ06NBA050SA-P915L33的Datasheet PDF文件第9页浏览型号10-FZ06NBA050SA-P915L33的Datasheet PDF文件第10页 
10-FZ06NBA050SA-P915L33  
datasheet  
Boost Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
IC = f(VCE  
)
IC = f(VCE)  
150  
150  
VGE  
:
6 V  
7 V  
125  
100  
75  
50  
25  
0
125  
100  
75  
50  
25  
0
8 V  
9 V  
10 V  
11 V  
12 V  
13 V  
14 V  
15 V  
16 V  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
0,0  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
V
CE(V)  
VCE(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
Tj:  
VGE  
=
Tj =  
150 °C  
VGE from 6 V to 16 V in steps of 1 V  
figure 3.  
IGBT  
figure 4.  
IGBT  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
IC = f(VGE  
)
Zth(j-s) = f(tp)  
1
50  
10  
40  
30  
20  
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
2
4
6
8
10  
12  
10  
10  
tp(s)  
V
GE(V)  
tp  
VCE  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,059  
25 °C  
Tj:  
150 °C  
Rth(j-s) =  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
1,11E-01  
3,60E-01  
3,77E-01  
1,24E-01  
4,58E-02  
4,19E-02  
1,12E+00  
1,48E-01  
4,74E-02  
7,68E-03  
6,49E-04  
1,61E-04  
Copyright Vincotech  
7
31 Jul. 2022 / Revision 3  

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