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10-EZ12PNA010SC-L927C08T PDF预览

10-EZ12PNA010SC-L927C08T

更新时间: 2023-09-03 20:34:23
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
20页 7114K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

10-EZ12PNA010SC-L927C08T 数据手册

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10-EZ12PNA010SC-L927C08T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Inverter Switch  
VCES  
Collector-emitter voltage  
1200  
18  
V
A
IC  
Collector current (DC current)  
Repetitive peak collector current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Tj = 150 °C  
ICRM  
tp limited by Tjmax  
Tj = Tjmax  
30  
A
Ptot  
59  
W
V
VGES  
Gate-emitter voltage  
±20  
10  
tSC  
Short circuit ratings  
VGE = 15 V, VCC = 800 V  
µs  
°C  
Tjmax  
Maximum junction temperature  
175  
Inverter Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
20  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IFRM  
tp limited by Tjmax  
Tj = Tjmax  
20  
A
Ptot  
50  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Rectifier Diode  
VRRM  
Peak repetitive reverse voltage  
1600  
47  
V
A
IF  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
270  
370  
61  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Copyright Vincotech  
2
31 Mar. 2021 / Revision 3  

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