Datasheet > 10-E106PMA020SA-L925A38Z

10-E106PMA020SA-L925A38Z

更新时间： 2024-04-09 19:00:32

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
29页	9563K
描述
IGBT3 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current

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10-E106PMA020SA-L925A38Z

datasheet

Inverter Switch Characteristics

figure 5.

IGBT

figure 6.

IGBT

Transient thermal impedance as a function of pulse width

Typical short circuit current as a function of V_GE

I_SC= f(V_GE

)

Z_th(j-s)= f(t_p)

350

300

250

200

150

100

-1

0,5

0,2

0,1

-2

0,05

0,02

0,01

0,005

-3

-5

-4

-3

-2

-1

t_p(s)

_GE(V)

V_CE

333

D =

t_p/ T

1,442

T_j≤

°C

R_th(j-s)=

K/W

IGBT thermal model values

R (K/W)

τ (s)

7,44E-02

1,73E-01

6,82E-01

2,86E-01

1,12E-01

1,15E-01

1,94E+00

2,52E-01

4,62E-02

1,04E-02

2,50E-03

4,24E-04

figure 7.

IGBT

figure 8.

IGBT

Safe operating area

Gate voltage vs gate charge

I_C= f(V_CE

)

V_GE= f(Q_g)

100

20,0

17,5

15,0

12,5

10,0

7,5

10µs

100µs

1ms

10ms

100ms

0,1

0,01

5,0

2,5

0,0

100

1000

10000

100

125

150

_CE(V)

Q_g(nC)

D =

I_C

single pulse

T_s=

T_j=

°C

V_GE

T_j=

T_jmax

19 Dec. 2023 / Revision 1

1...7 8 91011 12 13...29

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