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10-E106PMA020SA-L925A38Z PDF预览

10-E106PMA020SA-L925A38Z

更新时间: 2024-04-09 19:00:32
品牌 Logo 应用领域
VINCOTECH 双极性晶体管
页数 文件大小 规格书
29页 9563K
描述
IGBT3 Easy paralleling Low turn-off losses Low collector emitter saturation voltage Positive temperature coefficient Short tail current

10-E106PMA020SA-L925A38Z 数据手册

 浏览型号10-E106PMA020SA-L925A38Z的Datasheet PDF文件第7页浏览型号10-E106PMA020SA-L925A38Z的Datasheet PDF文件第8页浏览型号10-E106PMA020SA-L925A38Z的Datasheet PDF文件第9页浏览型号10-E106PMA020SA-L925A38Z的Datasheet PDF文件第11页浏览型号10-E106PMA020SA-L925A38Z的Datasheet PDF文件第12页浏览型号10-E106PMA020SA-L925A38Z的Datasheet PDF文件第13页 
10-E106PMA020SA-L925A38Z  
datasheet  
Inverter Switch Characteristics  
figure 5.  
IGBT  
figure 6.  
IGBT  
Transient thermal impedance as a function of pulse width  
Typical short circuit current as a function of VGE  
ISC = f(VGE  
)
Zth(j-s) = f(tp)  
1
10  
350  
300  
250  
200  
150  
100  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
10  
10  
10  
10  
tp(s)  
V
GE(V)  
VCE  
=
At  
333  
333  
V
D =  
tp / T  
1,442  
Tj ≤  
°C  
Rth(j-s) =  
K/W  
IGBT thermal model values  
R (K/W)  
τ (s)  
7,44E-02  
1,73E-01  
6,82E-01  
2,86E-01  
1,12E-01  
1,15E-01  
1,94E+00  
2,52E-01  
4,62E-02  
1,04E-02  
2,50E-03  
4,24E-04  
figure 7.  
IGBT  
figure 8.  
IGBT  
Safe operating area  
Gate voltage vs gate charge  
IC = f(VCE  
)
VGE = f(Qg)  
100  
20,0  
17,5  
15,0  
12,5  
10,0  
7,5  
10µs  
10  
1
100µs  
1ms  
10ms  
100ms  
DC  
0,1  
0,01  
5,0  
2,5  
0,0  
1
10  
100  
1000  
10000  
0
25  
50  
75  
100  
125  
150  
V
CE(V)  
Qg(nC)  
D =  
IC  
=
single pulse  
33  
25  
A
Ts =  
Tj =  
80  
15  
°C  
V
°C  
VGE  
=
Tj =  
Tjmax  
Copyright Vincotech  
10  
19 Dec. 2023 / Revision 1  

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