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1.5KE100C-E3/54 PDF预览

1.5KE100C-E3/54

更新时间: 2024-01-11 21:23:50
品牌 Logo 应用领域
威世 - VISHAY 二极管瞬态抑制器
页数 文件大小 规格书
6页 95K
描述
Trans Voltage Suppressor Diode, 1500W, 81V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

1.5KE100C-E3/54 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.83
Is Samacsys:N击穿电压标称值:11 V
最大钳位电压:16.2 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3极性:BIDIRECTIONAL
最大重复峰值反向电压:8.92 V子类别:Transient Suppressors
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

1.5KE100C-E3/54 数据手册

 浏览型号1.5KE100C-E3/54的Datasheet PDF文件第1页浏览型号1.5KE100C-E3/54的Datasheet PDF文件第2页浏览型号1.5KE100C-E3/54的Datasheet PDF文件第4页浏览型号1.5KE100C-E3/54的Datasheet PDF文件第5页浏览型号1.5KE100C-E3/54的Datasheet PDF文件第6页 
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A  
www.vishay.com  
Vishay General Semiconductor  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
75  
UNIT  
Typical thermal resistance, junction to ambient  
Typical thermal resistance, junction to lead  
RθJA  
RθJL  
15.4  
°C/ W  
ORDERING INFORMATION (Example)  
PREFERRED PIN  
1.5KE6.8A-E3/54  
1.5KE6.8AHE3/54 (1)  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
0.968  
54  
54  
1400  
1400  
13" diameter paper tape and reel  
13" diameter paper tape and reel  
0.968  
Note  
(1) AEC-Q101 qualified  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
100  
10  
1
150  
TJ = 25 °C  
Pulse Width (td)  
is defined as the Point  
where the Peak Current  
decays to 50 % of IPPM  
tr = 10 µs  
Peak Value  
IPPM  
100  
50  
0
Half Value -  
IPP  
2
IPPM  
10/1000 µs Waveform  
as defined by R.E.A.  
td  
0.1  
0.1 µs  
1.0 µs  
10 µs  
100 µs  
1.0 ms  
10 ms  
1.0  
3.0  
4.0  
0
2.0  
td - Pulse Width (s)  
t - Time (ms)  
Fig. 1 - Peak Pulse Power Rating Curve  
Fig. 3 - Pulse Waveform  
100  
10 000  
Uni-Directional  
Bi-Directional  
75  
50  
VR = 0  
1000  
100  
10  
V
R = Rated  
Stand-Off Voltage  
25  
0
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
0
25  
50  
75  
100  
125  
150 175  
200  
5
10  
100  
500  
TJ - Initial Temperature (°C)  
VBR - Breakdown Voltage (V)  
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature  
Fig. 4 - Typical Junction Capacitance  
Revision: 22-Nov-11  
Document Number: 88301  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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