Datasheet > 1.0SMB110A

1.0SMB110A

更新时间： 2022-12-29 20:43:33

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
5页	1310K
描述
SMB Plastic-Encapsulate Diodes

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1.0SMB110A 数据手册

1.0SMB Series

SMB Plastic-Encapsulate Diodes

Transient Voltage Suppressor Diodes

Features

●

P_PP

●V_RWM

1000W

5.8V- 450V

SMB

●

Glass passivated chip

Applications

●

Clamping Voltage

Marking

●1.0SMB

XXCA/XXA

Bi-directional

Uni-direction

XX From 5.8 To 450

Max

Item

Peak power dissipation

Peak pulse current

Symbol Unit

Conditions

with a 10/1000us waveform

P_PPM

1000

with a 10/1000us waveform

On infinite heat sink at T_L=75℃

I_PPM

See Next Table

5.0

P_D

Power dissipation

8.3 ms single half sine-wave unidirectional only

I_FSM

100

Peak forward surge current

Operating junction and

storage temperature range

T_J,T_STG

℃

-55 to +150

Electrical Characteristics（T =25℃ Unless otherwise specified）

Max

Item

Symbol Unit

Conditions

V_F

3.5/6.5

Maximum instantaneous forward

Voltage

at 50A for unidirectional only

R_θJL

R_θJA

℃/W

junction to lead

Thermal resistance

100

junction to ambient

Notes:

(1)

(2)

(3)

Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25℃ per Fig.2.

Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

VF<3.5V for devices of VBR<200V and VF<6.5V for devices of VBR>201V

igh Diode Semiconductor

12 3 4 5

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