JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SMBG Plastic-Encapsulate Diodes
Transient Voltage Suppressor Diodes
1.0SMB SERIES
Features
SMBG
●
PPP
1000W
● VRWM
5.8V- 450V
●
Glass passivated chip
Applications
●
Clamping Voltage
Bi-directional
Uni-direction
Marking
● 1.0SMB
XXCA/XXA
:
XX From 6.8 To 530
Conditions
Item
Symbol
Max
Unit
PPPM
Peak pulse power dissipation
W
1000
with a 10/1000us waveform
with a 10/1000us waveform
IPPM
A
Peak pulse current(1)
Power dissipation
See Next Table
PD
5.0
W
On infinite heat sink at TL=75℃
IFSM
100
Peak forward surge current(2)
A
8.3 ms single half sine-wave unidirectional only
Operating junction and
storage temperature range
TJ,TSTG
℃
-55 to +150
Electrical Characteristics(T =25℃ Unless otherwise specified)
a
Symbol
Max
Item
Unit
Conditions
at 50A for unidirectional only
junction to lead
Maximum instantaneous forward
Voltage (3)
VF
V
3.5/6.5
RθJL
RθJA
℃/W
℃/W
20
Thermal resistance
junction to ambient, LLead = 10 mm
100
Notes:
(1)
(2)
(3)
Non-repetitive current pulse, per Fig. 3 and derated above TA= 25℃per Fig.2.
Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V
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Rev. - 1.0
1