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0402ZD105KAT4A PDF预览

0402ZD105KAT4A

更新时间: 2024-01-03 21:01:05
品牌 Logo 应用领域
京瓷/艾维克斯 - KYOCERA AVX 电容器
页数 文件大小 规格书
4页 569K
描述
Capacitor, Ceramic, Chip, General Purpose, 1uF, 10V, ±10%, X5R, 0402 (1005 mm), Sn/NiBar, -55º ~ +85ºC, 13" Reel

0402ZD105KAT4A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:0402
包装说明:CHIPReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8532.24.00.20
风险等级:1.41Samacsys Description:Multilayer Ceramic Capacitors MLCC - SMD/SMT 10V 1uF X5R 0402 10%TOL
电容:1 µF电容器类型:CERAMIC CAPACITOR
介电材料:CERAMIC高度:0.56 mm
JESD-609代码:e3长度:1 mm
安装特点:SURFACE MOUNT多层:Yes
负容差:10%端子数量:2
最高工作温度:85 °C最低工作温度:-55 °C
封装形式:SMT包装方法:TR, Paper, 13 Inch
极性:NON-POLARIZED正容差:10%
额定(直流)电压(URdc):10 V尺寸代码:0402
表面贴装:YES温度特性代码:X5R
温度系数:15% ppm/ °C端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形状:WRAPAROUND宽度:0.5 mm
Base Number Matches:1

0402ZD105KAT4A 数据手册

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X5R Dielectric  
Specifications and Test Methods  
Parameter/Test  
Operating Temperature Range  
Capacitance  
X5R Specification Limits  
Measuring Conditions  
-55ºC to +85ºC  
Temperature Cycle Chamber  
Within specified tolerance  
≤ 2.5% for ≥ 50V DC rating  
Freq.: 1.0 kHz ± 10%  
Voltage: 1.0Vrms ± .2V  
For Cap > 10 µF, 0.5Vrms @ 120Hz  
≤ 12.5% for 25V, 35V DC rating  
≤ 12.5% Max. for 16V DC rating and lower  
Contact Factory for DF by PN  
Dissipation Factor  
10,000MΩ or 500MΩ - µF,  
Charge device with rated voltage for  
120 ± 5 secs @ room temp/humidity  
Insulation Resistance  
Dielectric Strength  
whichever is less  
Charge device with 250% of rated voltage for  
1-5 seconds, w/charge and discharge current  
limited to 50 mA (max)  
No breakdown or visual defects  
Appearance  
Capacitance  
Variation  
No defects  
Deflection: 2mm  
Test Time: 30 seconds  
≤ ±12%  
Resistance to  
Flexure  
Stresses  
Dissipation  
Factor  
Meets Initial Values (As Above)  
Insulation  
Resistance  
≥ Initial Value x 0.3  
≥ 95% of each terminal should be covered  
Dip device in eutectic solder at 230 ± 5ºC  
for 5.0 ± 0.5 seconds  
Solderability  
with fresh solder  
Appearance  
No defects, <25% leaching of either end terminal  
Capacitance  
Variation  
≤ ±7.5%  
Dip device in eutectic solder at 260ºC for 60sec-  
onds. Store at room temperature for 24 ± 2hours  
before measuring electrical properties.  
Dissipation  
Factor  
Resistance to  
Solder Heat  
Meets Initial Values (As Above)  
Meets Initial Values (As Above)  
Meets Initial Values (As Above)  
Insulation  
Resistance  
Dielectric  
Strength  
Appearance  
No visual defects  
Step 1: -55ºC ± 2º  
30 ± 3 minutes  
Capacitance  
Variation  
≤ ±7.5%  
Step 2: Room Temp  
≤ 3 minutes  
Dissipation  
Factor  
Thermal  
Shock  
Meets Initial Values (As Above)  
Meets Initial Values (As Above)  
Meets Initial Values (As Above)  
Step 3: +85ºC ± 2º  
Step 4: Room Temp  
30 ± 3 minutes  
Insulation  
Resistance  
≤ 3 minutes  
Dielectric  
Strength  
Repeat for 5 cycles and measure after  
24 ± 2 hours at room temperature  
Appearance  
No visual defects  
Charge device with 1.5X rated voltage in  
test chamber set at 85ºC ± 2ºC for 1000 hours  
(+48, -0).  
Capacitance  
Variation  
≤ ±12.5%  
Dissipation  
Factor  
Note: Contact factory for *optional  
specification part numbers that are tested at  
< 1.5X rated voltage.  
≤ Initial Value x 2.0 (See Above)  
≥ Initial Value x 0.3 (See Above)  
Load Life  
Insulation  
Resistance  
Remove from test chamber and stabilize at room  
temperature for 24 ± 2 hours  
Dielectric  
Strength  
Meets Initial Values (As Above)  
Appearance  
No visual defects  
Store in a test chamber set at 85ºC ± 2ºC/  
85% ± 5% relative humidity for 1000 hours  
(+48, -0) with rated voltage applied.  
Capacitance  
Variation  
≤ ±12.5%  
Load  
Humidity  
Dissipation  
Factor  
≤ Initial Value x 2.0 (See Above)  
≥ Initial Value x 0.3 (See Above)  
Meets Initial Values (As Above)  
Remove from chamber and stabilize at room  
Insulation  
Resistance  
temperature and humidity for  
24 ± 2 hours before measuring.  
Dielectric  
Strength  
27  
042418  

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