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0402ZD105KAT2A PDF预览

0402ZD105KAT2A

更新时间: 2024-01-11 11:23:58
品牌 Logo 应用领域
安森美 - ONSEMI 稳压器
页数 文件大小 规格书
20页 1733K
描述
200 mA, Ultra-Low Quiescent Current, Ultra-Low Noise, LDO Linear Voltage Regulator

0402ZD105KAT2A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:0402
包装说明:CHIPReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8532.24.00.20
风险等级:1.3电容:1 µF
电容器类型:CERAMIC CAPACITOR介电材料:CERAMIC
高度:0.56 mmJESD-609代码:e3
长度:1 mm安装特点:SURFACE MOUNT
多层:Yes负容差:10%
端子数量:2最高工作温度:85 °C
最低工作温度:-55 °C封装形式:SMT
包装方法:TR, Paper, 7 Inch极性:NON-POLARIZED
正容差:10%额定(直流)电压(URdc):10 V
尺寸代码:0402表面贴装:YES
温度特性代码:X5R温度系数:15% ppm/ °C
端子面层:Tin (Sn) - with Nickel (Ni) barrier端子形状:WRAPAROUND
宽度:0.5 mmBase Number Matches:1

0402ZD105KAT2A 数据手册

 浏览型号0402ZD105KAT2A的Datasheet PDF文件第1页浏览型号0402ZD105KAT2A的Datasheet PDF文件第3页浏览型号0402ZD105KAT2A的Datasheet PDF文件第4页浏览型号0402ZD105KAT2A的Datasheet PDF文件第5页浏览型号0402ZD105KAT2A的Datasheet PDF文件第6页浏览型号0402ZD105KAT2A的Datasheet PDF文件第7页 
NCV8702  
IN  
ENABLE  
LOGIC  
THERMAL  
SHUTDOWN  
UVLO  
EN  
MOSFET  
DRIVER WITH  
CURRENT LIMIT  
BANDGAP  
REFERENCE  
INTEGRATED  
SOFTSTART  
+
OUT  
AUTO LOW  
POWER MODE  
ACTIVE  
DISCHARGE  
EEPROM  
EN  
GND  
Figure 2. Simplified Schematic Block Diagram  
Table 1. PIN FUNCTION DESCRIPTION  
Pin No.  
XDFN 6  
Pin No.  
TSOP5  
Pin  
Name  
Description  
1
5
OUT  
Regulated output voltage pin. A small 1 mF ceramic capacitor is needed from this pin to ground  
to assure stability.  
2
3
4
4
2
3
N/C  
GND  
EN  
Not connected. This pin can be tied to ground to improve thermal dissipation.  
Power supply ground.  
Driving EN over 0.9 V turns on the regulator. Driving EN below 0.4 V puts the regulator into  
shutdown mode.  
5
6
N/C  
IN  
Not connected. This pin can be tied to ground to improve thermal dissipation.  
1
Input pin. It is recommended to connect a 1 mF ceramic capacitor close to the device pin.  
Table 2. ABSOLUTE MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
V
Input Voltage (Note 1)  
V
IN  
0.3 V to 6 V  
Output Voltage  
V
OUT  
0.3 V to V + 0.3 V  
V
IN  
Enable Input  
V
0.3 V to V + 0.3 V  
V
EN  
SC  
IN  
Output Short Circuit Duration  
Maximum Junction Temperature  
Storage Temperature  
t
Indefinite  
125  
s
T
°C  
°C  
V
J(MAX)  
T
STG  
55 to 150  
2000  
ESD Capability, Human Body Model (Note 2)  
ESD Capability, Machine Model (Note 2)  
ESD  
HBM  
ESD  
200  
V
MM  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.  
2. This device series incorporates ESD protection and is tested by the following methods:  
ESD Human Body Model tested per AECQ100002 (EIA/JESD22A114)  
ESD Machine Model tested per AECQ100003 (EIA/JESD22A115)  
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.  
http://onsemi.com  
2
 

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