Datasheet > ZXTP2013Z

ZXTP2013Z

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	317K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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ZXTP2013Z 数据手册

SMD Type

Transistors

PNP Transistor

ZXTP2013Z

■ Features

1.70 0.1

● 3.5 amps continuous current

● Up to 10 amps peak current

● Very low saturation voltages

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings T = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

-140

-100

-7

Unit

CBO

CEO

EBO

Collector - Emitter Voltage

Emitter - Base Voltage

Continuous Collector Current

-3.5

-10

Peak Pulse Current

ICM

(a)

1.5

Power Dissipation at T

= 25℃

= 25℃ ^(b)

2.1

Power Dissipation at T

(a)

(b)

Thermal Resistance Junction to Ambient

Junction Temperature

θJA

℃/W

℃

150

Storage Temperature Range

Notes:

Tstg

-55 to 150

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions.

(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions.

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中文翻译

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