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ZXT14P12DXTC PDF预览

ZXT14P12DXTC

更新时间: 2024-10-29 22:11:39
品牌 Logo 应用领域
捷特科 - ZETEX 晶体开关晶体管功率双极晶体管光电二极管
页数 文件大小 规格书
6页 264K
描述
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

ZXT14P12DXTC 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:SMALL OUTLINE, S-PDSO-G8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.31
Is Samacsys:N最大集电极电流 (IC):6 A
集电极-发射极最大电压:12 V配置:SINGLE
最小直流电流增益 (hFE):75JEDEC-95代码:MO-187AA
JESD-30 代码:S-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):1.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):110 MHz
Base Number Matches:1

ZXT14P12DXTC 数据手册

 浏览型号ZXT14P12DXTC的Datasheet PDF文件第2页浏览型号ZXT14P12DXTC的Datasheet PDF文件第3页浏览型号ZXT14P12DXTC的Datasheet PDF文件第4页浏览型号ZXT14P12DXTC的Datasheet PDF文件第5页浏览型号ZXT14P12DXTC的Datasheet PDF文件第6页 
ZXT14P12DX  
SuperSOT4™  
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=-12V; RSAT = 16m ; IC= -6A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
matrix structure combined with advanced assembly techniques to give  
extremely low on state losses. This makes it ideal for high efficiency, low  
voltage switching applications.  
MSOP8  
FEATURES  
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
hFE characterised up to 20A  
C
IC=6A Continuous Collector Current  
MSOP8 package  
B
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Power switches  
E
Motor control  
E
E
E
C
C
C
C
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
B
12mm embossed  
12mm embossed  
ZXT14P12DXTA  
ZXT14P12DXTC  
7
1000 units  
4000 units  
Top View  
13  
DEVICE MARKING  
T14P12DX  
ISSUE 1 - MARCH 2000  
1

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