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ZXT12P12DXTC PDF预览

ZXT12P12DXTC

更新时间: 2024-10-14 07:42:27
品牌 Logo 应用领域
美台 - DIODES 晶体开关晶体管
页数 文件大小 规格书
6页 261K
描述
DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

ZXT12P12DXTC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:SMALL OUTLINE, S-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.35最大集电极电流 (IC):3 A
集电极-发射极最大电压:12 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):20JEDEC-95代码:MO-187AA
JESD-30 代码:S-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):1.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):85 MHz
Base Number Matches:1

ZXT12P12DXTC 数据手册

 浏览型号ZXT12P12DXTC的Datasheet PDF文件第2页浏览型号ZXT12P12DXTC的Datasheet PDF文件第3页浏览型号ZXT12P12DXTC的Datasheet PDF文件第4页浏览型号ZXT12P12DXTC的Datasheet PDF文件第5页浏览型号ZXT12P12DXTC的Datasheet PDF文件第6页 
ZXT12P12DX  
SuperSOT4™  
DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=-12V; RSAT = 47m ; IC= -3A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
matrix structure combined with advanced assembly techniques to give  
extremely low on state losses. This makes it ideal for high efficiency, low  
voltage switching applications.  
MSOP8  
FEATURES  
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
hFE characterised up to 12A  
C1  
C2  
IC=3A Continuous Collector Current  
MSOP8 package  
B1  
B2  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Power switches  
E1  
E2  
Motor control  
E1  
B1  
E2  
C1  
C1  
C2  
C2  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
B2  
12mm embossed  
12mm embossed  
ZXT12P12DXTA  
ZXT12P12DXTC  
7
1000 units  
4000 units  
Top View  
13  
DEVICE MARKING  
T12P12DX  
ISSUE 1 - MARCH 2000  
1

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