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ZXT12N50DXTA PDF预览

ZXT12N50DXTA

更新时间: 2024-10-27 22:30:03
品牌 Logo 应用领域
捷特科 - ZETEX 晶体开关晶体管光电二极管
页数 文件大小 规格书
6页 258K
描述
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

ZXT12N50DXTA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SUPERSOT, MSOP-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.31
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):50
JEDEC-95代码:MO-187AAJESD-30 代码:S-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1.25 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):132 MHzBase Number Matches:1

ZXT12N50DXTA 数据手册

 浏览型号ZXT12N50DXTA的Datasheet PDF文件第2页浏览型号ZXT12N50DXTA的Datasheet PDF文件第3页浏览型号ZXT12N50DXTA的Datasheet PDF文件第4页浏览型号ZXT12N50DXTA的Datasheet PDF文件第5页浏览型号ZXT12N50DXTA的Datasheet PDF文件第6页 
ZXT12N50DX  
SuperSOT4™  
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=50V; RSAT = 45m ; IC= 3A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
matrix structure combined with advanced assembly techniques to give  
extremely low on state losses. This makes it ideal for high efficiency, low  
voltage switching applications.  
MSOP8  
FEATURES  
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
hFE characterised up to 5A  
C1  
C2  
IC=3A Continuous Collector Current  
MSOP8 package  
B1  
B2  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Power switches  
E1  
E2  
Motor control  
E1  
B1  
E2  
C1  
C1  
C2  
C2  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
B2  
ZXT12N50DXTA  
ZXT12N50DXTC  
7
12mm embossed 1000 units  
Top View  
12mm embossed  
13  
4000 units  
DEVICE MARKING  
T12N50DX  
ISSUE 1 - MARCH 2000  
1

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