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ZXT11N15DF PDF预览

ZXT11N15DF

更新时间: 2024-01-26 16:40:01
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
6页 422K
描述
15V NPN SILICON LOW SATURATION TRANSISTOR

ZXT11N15DF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.35
最大集电极电流 (IC):3 A集电极-发射极最大电压:15 V
配置:SINGLE最小直流电流增益 (hFE):150
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.806 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):145 MHz
Base Number Matches:1

ZXT11N15DF 数据手册

 浏览型号ZXT11N15DF的Datasheet PDF文件第2页浏览型号ZXT11N15DF的Datasheet PDF文件第3页浏览型号ZXT11N15DF的Datasheet PDF文件第4页浏览型号ZXT11N15DF的Datasheet PDF文件第5页浏览型号ZXT11N15DF的Datasheet PDF文件第6页 
ZXT11N15DF  
SuperSOT4™  
15V NPN SILICON LOW SATURATION TRANSISTOR  
SUMMARY  
V
CEO=15V; RSAT = 37m ; IC= 3A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
matrix structure combined with advanced assembly techniques to give  
extremely low on state losses. This makes it ideal for high efficiency, low  
voltage switching applications.  
SOT23  
FEATURES  
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
h
FE characterised up to 5A  
IC=3A Continuous Collector Current  
SOT23 package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Power switches  
E
C
Motor control  
B
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
Top View  
ZXT11N15DFTA  
ZXT11N15DFTC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
13  
DEVICE MARKING  
1N5  
ISSUE 1 - DECEMBER 1999  
1

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