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ZXT10P20DE6TA PDF预览

ZXT10P20DE6TA

更新时间: 2024-12-09 22:06:11
品牌 Logo 应用领域
捷特科 - ZETEX 晶体开关晶体管光电二极管
页数 文件大小 规格书
6页 234K
描述
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

ZXT10P20DE6TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SUPERSOT-6Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.1
最大集电极电流 (IC):2.5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):15
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):180 MHzBase Number Matches:1

ZXT10P20DE6TA 数据手册

 浏览型号ZXT10P20DE6TA的Datasheet PDF文件第2页浏览型号ZXT10P20DE6TA的Datasheet PDF文件第3页浏览型号ZXT10P20DE6TA的Datasheet PDF文件第4页浏览型号ZXT10P20DE6TA的Datasheet PDF文件第5页浏览型号ZXT10P20DE6TA的Datasheet PDF文件第6页 
ZXT10P20DE6  
SuperSOT™  
20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=-20V; RSAT = 96m ; IC= -2.5A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
m atrix structure com bined with advanced assem bly techniques to give  
extrem ely low on state losses. This m akes it ideal for high efficiency, low  
voltage switching applications.  
S OT2 3 -6  
FEATURES  
Low Equivalent On Resistance  
Extrem ely Low Saturation Voltage  
hFE characterised up to 6A  
IC=2.5A Continuous Collector Current  
SOT23-6 package  
APPLICATIONS  
DC - DC Converters  
Power Managem ent Functions  
Power switches  
Motor control  
C
C
B
C
C
E
ORDERING INFORMATION  
DEVICE  
REEL S IZE  
TAPE WIDTH  
(m m )  
QUANTITY  
PER REEL  
(in ch e s )  
ZXT10P20DE6TA  
ZXT10P20DE6TC  
7
8m m e m b o s s e d  
8m m e m b o s s e d  
3000 u n its  
10000 u n its  
Top View  
13  
DEVICE MARKING  
718  
ISSUE 1 - SEPTEMBER 2000  
1

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