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ZXMP6A16DN8TA PDF预览

ZXMP6A16DN8TA

更新时间: 2024-01-28 07:53:29
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
7页 184K
描述
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

ZXMP6A16DN8TA 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:SOIC-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.14
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):2.9 A
最大漏源导通电阻:0.085 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):18.3 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMP6A16DN8TA 数据手册

 浏览型号ZXMP6A16DN8TA的Datasheet PDF文件第2页浏览型号ZXMP6A16DN8TA的Datasheet PDF文件第3页浏览型号ZXMP6A16DN8TA的Datasheet PDF文件第4页浏览型号ZXMP6A16DN8TA的Datasheet PDF文件第5页浏览型号ZXMP6A16DN8TA的Datasheet PDF文件第6页浏览型号ZXMP6A16DN8TA的Datasheet PDF文件第7页 
ZXMP6A16DN8  
DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS = -60V; RDS(ON) = 0.085 ; ID= -3.9A  
DESCRIPTION  
This new generation of trench MOSFETs from Zetex utilizes a unique structure  
that com bines the benefits of low on-resistance with fast switching speed. This  
m akes them ideal for high efficiency, low voltage, power m anagem ent  
applications.  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
SO8  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC-DC converters  
Power m anagem ent functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL TAPE  
QUANTITY  
PER REEL  
PINOUT  
WIDTH  
12m m  
12m m  
ZXMP6A16DN8TA  
ZXMP6A16DN8TC  
7’‘  
500 units  
13‘  
2500 units  
DEVICE MARKING  
ZXMP  
6A16D  
Top view  
ISSUE 3 - MAY 2005  
1

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