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ZXMP6A13GTA PDF预览

ZXMP6A13GTA

更新时间: 2024-11-24 21:55:23
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
7页 191K
描述
60V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMP6A13GTA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-223, 4 PINReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.1
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):2.3 A
最大漏源导通电阻:0.39 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):7.8 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMP6A13GTA 数据手册

 浏览型号ZXMP6A13GTA的Datasheet PDF文件第2页浏览型号ZXMP6A13GTA的Datasheet PDF文件第3页浏览型号ZXMP6A13GTA的Datasheet PDF文件第4页浏览型号ZXMP6A13GTA的Datasheet PDF文件第5页浏览型号ZXMP6A13GTA的Datasheet PDF文件第6页浏览型号ZXMP6A13GTA的Datasheet PDF文件第7页 
ZXMP6A13G  
60V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS = -60V: RDS(on) = 0.390 : ID = -2.3A  
DESCRIPTION  
This new generation of Trench MOSFETs from Zetex utilizes a unique structure  
that com bines the benefits of low on-resistance with fast switching speed. This  
m akes them ideal for high efficiency, low voltage, power m anagem ent  
applications.  
SOT223  
FEATURES  
·
·
·
·
·
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT223 package  
APPLICATIONS  
·
·
·
·
DC-DC converters  
Power m anagem ent functions  
Relay and solenoid driving  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMP6A13GTA  
ZXMP6A13GTC  
7”  
12m m  
12m m  
1000 units  
4000 units  
13”  
Top View  
DEVICE MARKING  
· ZXMP  
6A13  
ISSUE 2 - J ULY 2004  
1

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