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ZXMP3F35N8 PDF预览

ZXMP3F35N8

更新时间: 2024-11-21 05:54:39
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
8页 275K
描述
30V SO8 P-channel enhancement mode MOSFET

ZXMP3F35N8 数据手册

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ZXMP3F35N8  
30V SO8 P-channel enhancement mode MOSFET  
Summary  
V(BR)DSS (V)  
RDS(on) ()  
ID(A)  
-30  
0.012 @ VGS=-10V  
0.018 @ VGS=-4.5V  
-17.1  
Description  
This new generation Trench MOSFET from Zetex has been designed to minimize the on-state  
resistance (RDS(on)) and yet maintain superior switching performance making it ideal for battery  
protection and reverse connection applications  
Features  
Low on-resistance  
Low gate drive  
SO8 package  
Applications  
Power management functions  
Disconnect switches  
S
S
S
G
D
D
D
D
Reverse battery protection  
Ordering information  
Top view  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXMP3F35N8TA  
7
12  
500  
Device marking  
ZXMP 3F35  
Issue 1 - August 2008  
© Diodes Incorporated 2008  
1
www.zetex.com  
www.diodes.com  

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