Datasheet > ZXMP10A18

ZXMP10A18

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	525K
描述
SOT-223

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ZXMP10A18 数据手册

ZXMP10A18

P-CHANNEL HIGH VOLTAGE MOSFET

FEATURES

 V_DS=-100V,R_DS(ON)≤150mΩ@V_GS=-10V,I_D=-3.7A

 Fast Switching Speed

 Low On-Resistance

 For Power Management Functions and DC-DC Converters

 For Motor Control, Relay and Solenoid Driving

 Surface Mount device

SOT-223

MECHANICAL DATA



Case: SOT-223

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.112 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

VDS

Value

-100

±20

Unit

VGS

VGS=-10V, TA=25°C(2)

VGS=-10V, TA=70°C(2)

VGS=-10V, TA=25°C(1)

-3.7

-3.0

-2.6

Continuous drain current

I_D

IDM

Pulsed drain current(3)

Continuous Source Current (Body Diode)(2)

-16.5

-5.3

ISM

Pulsed Source Current (Body Diode)(3)

-16.5

3.9

62.5

°C/W

°C

Power dissipation(1)

Power dissipation(2)

Thermal Resistance, Junction to Ambient (1)

Thermal Resistance, Junction to Ambient (2)

Thermal Resistance, Junction to Lead(4)

RθJA

RθJL

TJ,TSTG

7.65

-55 ~+150

Operating and Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V(BR)DSS

-100

μA

VGS=0V, ID=-250μA

V_DS=-100V,VGS=0V

V_DS=0V,

I_DSS

I_GSS

V_GS(th)

-1

±100

-4.0

0.15

0.19

VGS=±20V

-2.0

VDS=VGS, ID=-250μA

VGS=-10V, ID=-2.8A

VGS=-6V, ID=-2.4A

VDS=-15V, ID=-2.8A

IS=-3.5A,VGS=0V,TJ=25°C

IF=-2.8A,di/dt=100A/μs,

TJ=25°C

Drain-source on-resistance(5)

R_DS(ON)

Forward Trans-conductance (5,6)

Diode Forward Voltage (5)

Reverse Recovery Time(6)

Reverse Recovery Charge(6)

Input capacitance (6)

Output capacitance(6)

Reverse transfer capacitance(6,7)

Total Gate Charge(6,7)

Gate-Source Charge(6,7)

Gate-Drain Charge(6,7)

Turn-on delay time(6,7)

Turn-on rise time(6,7)

Turn-off delay time(6,7)

Turn-off fall time(6,7)

g_fs

V_SD

t_rr

Qrr

C_iss

C_oss

C_rss

Q^g

Qgs

Q^gd

t_d(on)

t_r

t_d(off)

t_f

-0.85 -0.95

107

1055

26.9

3.9

10.2

4.6

V_{DS=-50V, VGS=0V, f=1MHz}

V_{DS=-50V,VGS=-10V,ID=-2.8A}

VDD=-50V,ID=-1A,VGS=-10V,

RG=6.0Ω

6.8

33.9

17.9

Notes: 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions;

the deviceis measured when operating in a steady-state condition.

2. Same as Note 1, except the device is measured at t ≤10 seconds.

3. Same as Note 1, except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction

temperature.

4.Thermal resistance from junction to solder-point (at the end of the drain lead).

5. Measured under pulsed conditions. Pulse width≤300μs; duty cycle≤2%

6. For design aid only, not subject to production testing.

7. Switching characteristics are independent of operating junction temperatures

1 / 6

E-mail:hkt@heketai.com

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