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ZXMP10A17Q PDF预览

ZXMP10A17Q

更新时间： 2024-11-22 18:09:35
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
5页 491K
描述
SOT-223

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ZXMP10A17Q 数据手册

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ZXMP10A17Q  
P-CHANNEL HIGH VOLTAGE MOSFET  
FEATURES  
VDS=-100V,RDS(ON)≤350mΩ@VGS=-10V,ID=-2.4A  
Fast Switching Speed  
Low Input Capacitance and Low Gate Drive  
For Power Management Functions and DC-DC Converters  
For Motor Control, Relay and Solenoid Driving  
Surface Mount device  
SOT-223  
MECHANICAL DATA  
Case: SOT-223  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.112 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDS  
Value  
-100  
±20  
Unit  
V
V
VGS  
VGS=-10V, TA=25°C(2)  
V
GS
=-10V,
T
A
=70°C(2)  
VGS=-10V, TA=25°C(1)  
-2.4  
-1.9  
-1.7  
-9.4  
-4.5  
-9.4  
2
3.9  
62.5  
32  
A
A
A
A
A
A
W
W
°C/W  
°C/W  
°C/W  
°C  
Continuous drain current  
ID  
IDM  
IS  
ISM  
Pulsed drain current(3)  
Continuous Source Current (Body Diode)(2)  
Pulsed Source Current (Body Diode)(3)  
Power dissipation(1)  
Power dissipation(2)  
PD  
Thermal Resistance, Junction to Ambient (1)  
Thermal Resistance, Junction to Ambient (2)  
Thermal Resistance, Junction to Case(1)  
RθJA  
RθJC  
TJ,TSTG  
7.7  
-55 ~+150  
Operating and Storage temperature  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
Drain-Source breakdown voltage  
Zero gate voltage drain current  
Gate-body leakage current  
Gate-threshold voltage  
V(BR)DSS  
-100  
V
nA  
nA  
V
Ω
Ω
VGS=0V, ID=-250μA  
VDS=-100V,VGS=0V  
VDS=0V,  
IDSS  
IGSS  
VGS(th)  
-500  
±100  
-4.0  
0.35  
0.45  
VGS=±20V  
-2.0  
VDS=VGS, ID=-250μA  
VGS=-10V, ID=-1.4A  
VGS=-6V, ID=-1.2A  
VDS=-15V, ID=-1.4A  
IS=-1.7A,VGS=0V  
Drain-source on-resistance(4)  
RDS(ON)  
Forward Trans-conductance (4,5)  
Diode Forward Voltage (4)  
Reverse Recovery Time(5)  
Reverse Recovery Charge(5)  
Input capacitance (5)  
Output capacitance(5)  
Reverse transfer capacitance(5,6)  
gfs  
VSD  
trr  
Qrr  
Ciss  
Coss  
Crss  
2.8  
S
V
-0.85 -0.95  
33  
48  
nS  
nC  
pF  
pF  
pF  
nC  
nC  
nC  
nC  
nS  
nS  
nS  
nS  
IF=-1.5A,di/dt=100A/μs  
424  
VDS=-50V, VGS=0V, f=1MHz  
VDS=-50V,VGS=-6.0V,ID=-1.4A  
VDS=-50V,VGS=-10V,ID=-1.4A  
36.6  
29.8  
7.1  
10.7  
1.7  
3.8  
3.0  
3.5  
13.4  
7.2  
Total Gate Charge(5,6)  
Qg  
Gate-Source Charge(5,6)  
Gate-Drain Charge(5,6)  
Turn-on delay time(5,6)  
Turn-on rise time(5,6)  
Turn-off delay time(5,6)  
Turn-off fall time(5,6)  
Qgs  
Qgd  
td(on)  
tr  
td(off)  
tf  
VDD=-15V,ID=-1A,VGS=-10V,  
RG=6.0Ω  
Notes: 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is  
measured when operating in a steady-state condition.  
2. Same as Note 1, except the device is measured at t ≤10 seconds.  
3. Same as Note 1, except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.  
4. Measured under pulsed conditions. Pulse width≤300μs; duty cycle≤2%.  
5. For design aid only, not subject to production testing.  
6. Switching characteristics are independent of operating junction temperatures.  
1 / 5  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  
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