5秒后页面跳转
ZXMP10A17K PDF预览

ZXMP10A17K

更新时间: 2024-10-15 18:09:19
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
7页 917K
描述
TO-252

ZXMP10A17K 数据手册

 浏览型号ZXMP10A17K的Datasheet PDF文件第2页浏览型号ZXMP10A17K的Datasheet PDF文件第3页浏览型号ZXMP10A17K的Datasheet PDF文件第4页浏览型号ZXMP10A17K的Datasheet PDF文件第5页浏览型号ZXMP10A17K的Datasheet PDF文件第6页浏览型号ZXMP10A17K的Datasheet PDF文件第7页 
ZXMP10A17K  
P-CHANNEL HIGH VOLTAGE MOSFET  
FEATURES  
VDS=-100V,RDS(ON)≤350mΩ@VGS=-10V,ID=-3.9A  
Low Input Capacitance and Fast switching speed  
Low gate drive  
For Power Management Functions and DC-DC Converters Applications  
For Disconnect switches and Motor control Applications  
Surface Mount device  
TO-252  
MECHANICAL DATA  
Case: TO-252(DPAK)  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.33 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Drain-source voltage  
Symbol  
Value  
Unit  
V
VDS  
-100  
±20  
VGS  
Gate-source voltage  
V
TA = +25°C(Note2)  
-3.9  
Continuous drain current, VGS = -10V  
TA= +70°C(Note2)  
TA = +25°C(Note1)  
(Note3)  
ID  
-3.1  
A
-2.4  
IDM  
IS  
Pulsed drain current VGS= -10V  
-11.3  
-8.7  
A
A
A
Maximum Body Diode Forward Current  
Pulsed source current (body diode)  
(Note2)  
ISM  
(Note3)  
-11.3  
4.0  
TA = +25°C(Note1)  
TA= +25°C(Note2)  
TA = +25°C(Note5)  
(Note1)  
Power dissipation  
PD  
10.2  
2.0  
W
31  
RθJA  
Thermal resistance from Junction to ambient (Note2)  
(Note5)  
12.3  
62  
°C/W  
RθJL  
Thermal Resistance, Junction to Case (Note4)  
Operating and Storage temperature  
2.4  
°C/W  
°C  
TJ,TSTG  
-55 ~+150  
Notes: 1. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in  
still air conditions; the device is measured when operating in a steady-state condition.  
2. Same as note (1), except the device is measured at t ≤ 10 sec.  
3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300μs. The pulse current is limited by the  
maximum junction temperature.  
4. Thermal resistance from junction to solder-point (at the end of the drain lead).  
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions; the device is measured when operating in a steady-state condition.  
1 / 7  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

与ZXMP10A17K相关器件

型号 品牌 获取价格 描述 数据表
ZXMP10A17KTA DIODES

获取价格

Power Field-Effect Transistor, 2.5A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me
ZXMP10A17KTC DIODES

获取价格

100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17Q HOTTECH

获取价格

SOT-223
ZXMP10A18 HOTTECH

获取价格

SOT-223
ZXMP10A18G DIODES

获取价格

100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A18G ZETEX

获取价格

100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A18GTA DIODES

获取价格

100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A18GTA ZETEX

获取价格

100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A18GTC ZETEX

获取价格

100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A18GTC DIODES

获取价格

100V P-CHANNEL ENHANCEMENT MODE MOSFET