ZXMP10A17
P-CHANNEL HIGH VOLTAGE MOSFET
FEATURES
VDS=-100V,RDS(ON)≤350mΩ@VGS=-10V,ID=-2.4A
Fast Switching Speed
Low Input Capacitance and Low Gate Drive
For Power Management Functions and DC-DC Converters
For Motor Control, Relay and Solenoid Driving
Surface Mount device
SOT-223
MECHANICAL DATA
Case: SOT-223
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.112 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
VDS
Value
-100
±20
Unit
V
V
VGS
VGS=-10V, TA=25°C(2)
VGS=-10V, TA=70°C(2)
VGS=-10V, TA=25°C(1)
-2.4
-1.9
-1.7
-9.4
-4.5
-9.4
2
3.9
62.5
32
7.7
A
A
A
A
A
A
W
W
°C/W
°C/W
°C/W
°C
Continuous drain current
ID
IDM
IS
ISM
Pulsed drain current(3)
Continuous Source Current (Body Diode)(2)
Pulsed Source Current (Body Diode)(3)
Power dissipation(1)
Power dissipation(2)
PD
Thermal Resistance, Junction to Ambient (1)
Thermal Resistance, Junction to Ambient (2)
Thermal Resistance, Junction to Case(4)
RθJA
RθJC
TJ,TSTG
Operating and Storage temperature
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage
V(BR)DSS
-100
V
nA
nA
V
Ω
Ω
VGS=0V, ID=-250μA
VDS=-100V,VGS=0V
VDS=0V,
IDSS
IGSS
VGS(th)
-500
±100
-4.0
0.35
0.45
VGS=±20V
-2.0
VDS=VGS, ID=-250μA
VGS=-10V, ID=-1.4A
VGS=-6V, ID=-1.2A
VDS=-15V, ID=-1.4A
IS=-1.7A,VGS=0V
Drain-source on-resistance(5)
RDS(ON)
Forward Trans-conductance (5,6)
Diode Forward Voltage (5)
Reverse Recovery Time(6)
Reverse Recovery Charge(6)
Input capacitance (6)
Output capacitance(6)
Reverse transfer capacitance(6,7)
gfs
VSD
trr
Qrr
Ciss
Coss
Crss
2.8
S
V
-0.85 -0.95
33
48
nS
nC
pF
pF
pF
nC
nC
nC
nC
nS
nS
nS
nS
IF=-1.5A,di/dt=100A/μs
424
VDS=-50V, VGS=0V, f=1MHz
VDS=-50V,VGS=-6.0V,ID=-1.4A
VDS=-50V,VGS=-10V,ID=-1.4A
36.6
29.8
7.1
10.7
1.7
3.8
3.0
3.5
13.4
7.2
Total Gate Charge(6,7)
Qg
Gate-Source Charge(6,7)
Gate-Drain Charge(6,7)
Turn-on delay time(6,7)
Turn-on rise time(6,7)
Turn-off delay time(6,7)
Turn-off fall time(6,7)
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD=-15V,ID=-1A,VGS=-10V,
RG=6.0Ω
Notes: 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
2. Same as Note1, except the device is measured at t ≤ 10 seconds.
3. Same as Note1, except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
4. Thermal resistance from junction to solder-point (at the end of the drain lead).
5. Measured under pulsed conditions. Pulse width ≤300μs; duty cycle ≤ 2%.
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.
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