5秒后页面跳转
捷配首页

Datasheet > ZXMP10A17
ZXMP10A17 PDF预览

ZXMP10A17

更新时间： 2024-06-27 12:13:39
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
6页 535K
描述
SOT-223

阅读下载

中文翻译

获取价格

ZXMP10A17 数据手册

 浏览型号ZXMP10A17的Datasheet PDF文件第2页浏览型号ZXMP10A17的Datasheet PDF文件第3页浏览型号ZXMP10A17的Datasheet PDF文件第4页浏览型号ZXMP10A17的Datasheet PDF文件第5页浏览型号ZXMP10A17的Datasheet PDF文件第6页 
ZXMP10A17  
P-CHANNEL HIGH VOLTAGE MOSFET  
FEATURES  
VDS=-100V,RDS(ON)≤350mΩ@VGS=-10V,ID=-2.4A  
Fast Switching Speed  
Low Input Capacitance and Low Gate Drive  
For Power Management Functions and DC-DC Converters  
For Motor Control, Relay and Solenoid Driving  
Surface Mount device  
SOT-223  
MECHANICAL DATA  
Case: SOT-223  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.112 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDS  
Value  
-100  
±20  
Unit  
V
V
VGS  
VGS=-10V, TA=25°C(2)  
VGS=-10V, TA=70°C(2)  
VGS=-10V, TA=25°C(1)  
-2.4  
-1.9  
-1.7  
-9.4  
-4.5  
-9.4  
2
3.9  
62.5  
32  
7.7  
A
A
A
A
A
A
W
W
°C/W  
°C/W  
°C/W  
°C  
Continuous drain current  
ID  
IDM  
IS  
ISM  
Pulsed drain current(3)  
Continuous Source Current (Body Diode)(2)  
Pulsed Source Current (Body Diode)(3)  
Power dissipation(1)  
Power dissipation(2)  
PD  
Thermal Resistance, Junction to Ambient (1)  
Thermal Resistance, Junction to Ambient (2)  
Thermal Resistance, Junction to Case(4)  
RθJA  
RθJC  
TJ,TSTG  
Operating and Storage temperature  
-55 ~+150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
Drain-Source breakdown voltage  
Zero gate voltage drain current  
Gate-body leakage current  
Gate-threshold voltage  
V(BR)DSS  
-100  
V
nA  
nA  
V
Ω
Ω
VGS=0V, ID=-250μA  
VDS=-100V,VGS=0V  
VDS=0V,  
IDSS  
IGSS  
VGS(th)  
-500  
±100  
-4.0  
0.35  
0.45  
VGS=±20V  
-2.0  
VDS=VGS, ID=-250μA  
VGS=-10V, ID=-1.4A  
VGS=-6V, ID=-1.2A  
VDS=-15V, ID=-1.4A  
IS=-1.7A,VGS=0V  
Drain-source on-resistance(5)  
RDS(ON)  
Forward Trans-conductance (5,6)  
Diode Forward Voltage (5)  
Reverse Recovery Time(6)  
Reverse Recovery Charge(6)  
Input capacitance (6)  
Output capacitance(6)  
Reverse transfer capacitance(6,7)  
gfs  
VSD  
trr  
Qrr  
Ciss  
Coss  
Crss  
2.8  
S
V
-0.85 -0.95  
33  
48  
nS  
nC  
pF  
pF  
pF  
nC  
nC  
nC  
nC  
nS  
nS  
nS  
nS  
IF=-1.5A,di/dt=100A/μs  
424  
VDS=-50V, VGS=0V, f=1MHz  
VDS=-50V,VGS=-6.0V,ID=-1.4A  
VDS=-50V,VGS=-10V,ID=-1.4A  
36.6  
29.8  
7.1  
10.7  
1.7  
3.8  
3.0  
3.5  
13.4  
7.2  
Total Gate Charge(6,7)  
Qg  
Gate-Source Charge(6,7)  
Gate-Drain Charge(6,7)  
Turn-on delay time(6,7)  
Turn-on rise time(6,7)  
Turn-off delay time(6,7)  
Turn-off fall time(6,7)  
Qgs  
Qgd  
td(on)  
tr  
td(off)  
tf  
VDD=-15V,ID=-1A,VGS=-10V,  
RG=6.0Ω  
Notes: 1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is  
measured when operating in a steady-state condition.  
2. Same as Note1, except the device is measured at t ≤ 10 seconds.  
3. Same as Note1, except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.  
4. Thermal resistance from junction to solder-point (at the end of the drain lead).  
5. Measured under pulsed conditions. Pulse width ≤300μs; duty cycle ≤ 2%.  
6. For design aid only, not subject to production testing.  
7. Switching characteristics are independent of operating junction temperatures.  
1 / 6  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  
123456

中文翻译

下载PDF

与ZXMP10A17相关器件

型号 品牌 获取价格 描述 数据表
ZXMP10A17E6 DIODES

获取价格

 		100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17E6 ZETEX

获取价格

 		100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17E6Q DIODES

获取价格

 		100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17E6QTA DIODES

获取价格

 		Power Field-Effect Transistor, 1.3A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Me
ZXMP10A17E6TA ZETEX

获取价格

 		100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17E6TA DIODES

获取价格

 		100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17E6TC ZETEX

获取价格

 		100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17G DIODES

获取价格

 		100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17GQ DIODES

获取价格

 		100V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP10A17GQTA DIODES

获取价格

 		Power Field-Effect Transistor,

与ZXMP10A17相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证