5秒后页面跳转
ZXMN6A08E6TA PDF预览

ZXMN6A08E6TA

更新时间: 2024-10-14 07:42:31
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
8页 651K
描述
60V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN6A08E6TA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:17 weeks风险等级:5.14
其他特性:LOW THRESHOLD配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):2.5 A
最大漏极电流 (ID):2.8 A最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.7 W
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMN6A08E6TA 数据手册

 浏览型号ZXMN6A08E6TA的Datasheet PDF文件第2页浏览型号ZXMN6A08E6TA的Datasheet PDF文件第3页浏览型号ZXMN6A08E6TA的Datasheet PDF文件第4页浏览型号ZXMN6A08E6TA的Datasheet PDF文件第5页浏览型号ZXMN6A08E6TA的Datasheet PDF文件第6页浏览型号ZXMN6A08E6TA的Datasheet PDF文件第7页 
A Product Line of  
Diodes Incorporated  
ZXMN6A08E6  
60V N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features and Benefits  
Low on-resistance  
ID  
V(BR)DSS  
RDS(on)  
Fast switching speed  
TA = 25°C  
Low gate drive  
3.5A  
2.5A  
80mΩ @ VGS=10V  
Low threshold  
100V  
“Green” component and RoHS compliant (Note 1)  
Qualified to AEC-Q101 Standards for High Reliability  
150mΩ @ VGS=4.5V  
Description and Applications  
Mechanical Data  
This MOSFET has been designed to minimize the on-state resistance  
and yet maintain superior switching performance, making it ideal for  
high efficiency power management applications.  
Case: SOT23-6  
Case Material: Molded Plastic, UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
DC-DC Converters  
Power management functions  
Disconnect switches  
Motor control  
Terminals: Finish - Matte Tin annealed over Copper lead frame.  
Solderable per MIL-STD-202, Method 208  
Weight: 0.018 grams (approximate)  
SOT23-6  
D
D
D
G
D
D
G
S
S
Equivalent Circuit  
Top View  
Pin Out - Top View  
Ordering Information (Note 1)  
Product  
ZXMN6A08E6TA  
Marking  
See below  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
7
8
3,000  
Notes:  
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about  
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.  
Marking Information  
6A8 = Product Type Marking Code  
6A8  
1 of 8  
www.diodes.com  
August 2010  
© Diodes Incorporated  
ZXMN6A08E6  
Document Number DS33376 Rev. 5 - 2  

与ZXMN6A08E6TA相关器件

型号 品牌 获取价格 描述 数据表
ZXMN6A08E6TC ZETEX

获取价格

60V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXMN6A08G ZETEX

获取价格

60V SOT223 N-channel enhancement mode MOSFET
ZXMN6A08G DIODES

获取价格

60V SOT223 N-channel enhancement mode MOSFET
ZXMN6A08GQ DIODES

获取价格

60V SOT223 N-channel enhancement mode MOSFET
ZXMN6A08GQTA DIODES

获取价格

暂无描述
ZXMN6A08GQTC DIODES

获取价格

暂无描述
ZXMN6A08GTA DIODES

获取价格

60V SOT223 N-channel enhancement mode MOSFET
ZXMN6A08GTA ZETEX

获取价格

60V SOT223 N-channel enhancement mode MOSFET
ZXMN6A08GTC DIODES

获取价格

60V SOT223 N-channel enhancement mode MOSFET
ZXMN6A08GTC ZETEX

获取价格

60V SOT223 N-channel enhancement mode MOSFET