是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.12 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.93 A | 最大漏极电流 (ID): | 1.1 A |
最大漏源导通电阻: | 0.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.806 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMN6A07Z | DIODES |
获取价格 |
60V SOT89 N-channel enhancement mode mosfet |
![]() |
ZXMN6A07Z | ZETEX |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET |
![]() |
ZXMN6A07Z_07 | ZETEX |
获取价格 |
60V SOT89 N-channel enhancement mode mosfet |
![]() |
ZXMN6A07ZTA | DIODES |
获取价格 |
60V SOT89 N-channel enhancement mode mosfet |
![]() |
ZXMN6A07ZTA | ZETEX |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET |
![]() |
ZXMN6A08 | ZETEX |
获取价格 |
60V SOT223 N-channel enhancement mode MOSFET |
![]() |
ZXMN6A08E6 | ZETEX |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET |
![]() |
ZXMN6A08E6 | DIODES |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET |
![]() |
ZXMN6A08E6_06 | ZETEX |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET |
![]() |
ZXMN6A08E6Q | DIODES |
获取价格 |
60V N-CHANNEL ENHANCEMENT MODE MOSFET |
![]() |