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ZXMN2A04DN8TC PDF预览

ZXMN2A04DN8TC

更新时间: 2024-10-13 22:15:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管开关光电二极管
页数 文件大小 规格书
4页 59K
描述
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN2A04DN8TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SO-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.2
其他特性:LOW THRESHOLD配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):5.9 A
最大漏源导通电阻:0.025 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMN2A04DN8TC 数据手册

 浏览型号ZXMN2A04DN8TC的Datasheet PDF文件第2页浏览型号ZXMN2A04DN8TC的Datasheet PDF文件第3页浏览型号ZXMN2A04DN8TC的Datasheet PDF文件第4页 
ZXMN2A04DN8  
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS=20V; RDS(ON)=0.030ID=6.8A  
V
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilizes a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage, power  
m anagem ent applications.  
S O8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC Converters  
Power Managem ent Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
Top View  
DEVICE  
REEL S IZE  
TAPE WIDTH  
QUANTITY  
PER REEL  
ZXMN2A04DN8TA  
ZXMN2A04DN8TC  
7”  
12m m  
12m m  
500 u n its  
2500 u n its  
13”  
DEVICE MARKING  
ZXMN  
2A04D  
PROVISIONAL ISSUE A - AUGUST 2001  
1

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