ZXMN10A11G

更新时间： 2024-10-14 07:42:35

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	640K
描述
100V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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ZXMN10A11G 数据手册

A Product Line of

Diodes Incorporated

ZXMN10A11G

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Fast switching speed

I_D

V_(BR)DSS

R_DS(on)

Low gate drive

T_A= 25°C

Low input capacitance

2.4A

2.1A

350mΩ @ V_GS= 10V

450mΩ @ V_GS= 6.0V

Qualified to AEC-Q101 Standards for High Reliability

100V

Mechanical Data

•

Case: SOT223

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

•

Motor control

•

Weight: 0.112 grams (approximate)

DC-DC Converters

Power management functions

Uninterrupted power supply

SOT223

Equivalent Circuit

Pin Out - Top View

Top View

Ordering Information

Product

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

ZXMN10A11GTA

See below

1,000

Marking Information

ZXMN = Product Type Marking Code, Line 1

10A11 = Product Type Marking Code, Line 2

ZXMN

10A11

1 of 8

www.diodes.com

January 2010

ZXMN10A11G

Document Number DS32056 Rev. 6 - 2

12 3 4 5 6 7 8

中文翻译

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