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ZXMN10A08E6

更新时间： 2024-12-02 07:42:35

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	233K
描述
100V N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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ZXMN10A08E6 数据手册

A Product Line of

Diodes Incorporated

ZXMN10A08E6

100V N-CHANNEL ENHANCEMENT MODE MOSFET

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Product Summary

Features and Benefits

•

Low on-resistance

I_D

V_(BR)DSS

R_DS(on)

Fast switching speed

_A= 25°C

Qualified to AEC-Q101 Standards for High Reliability

100V

0.25Ω

1.9A

Mechanical Data

•

Case: SOT23-6

Description and Applications

This MOSFET utilizes a unique structure that combines the benefits

of low on-resistance with fast switching speed, this makes it ideal for

high efficiency power management applications.

Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

DC-DC Converters

Power management functions

Disconnect Switches

Motor control

•

Weight: 0.015 grams (approximate)

SOT23-6

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Package Pin Out

Equivalent Circuit

Ordering Information

Product

Reel size (inches)

Tape width (mm)

Quantity per reel

3,000

ZXMN10A08E6TA

ZXMN10A08E6TC

10,000

Marking Information

10A8

10A8 = Product Type Marking Code

1 of 8

www.diodes.com

October 2009

ZXMN10A08E6

Document Number DS31909 Rev. 7 - 2

12 3 4 5 6 7 8

中文翻译

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