是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SM-8, 8 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.15 |
配置: | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 2.7 A | 最大漏源导通电阻: | 0.12 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 4 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大脉冲漏极电流 (IDM): | 14.5 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMHC3A01T8TC | DIODES |
获取价格 |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE | |
ZXMHC3A01T8TC | ZETEX |
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COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE | |
ZXMHC3F381N8 | DIODES |
获取价格 |
30V SO8 Complementary enhancement mode MOSFET H-Bridge | |
ZXMHC3F381N8TC | DIODES |
获取价格 |
30V SO8 Complementary enhancement mode MOSFET H-Bridge | |
ZXMHC6A07N8 | DIODES |
获取价格 |
60V SO8 Complementary enhancement mode MOSFET H-Bridge | |
ZXMHC6A07N8TC | DIODES |
获取价格 |
60V SO8 Complementary enhancement mode MOSFET H-Bridge | |
ZXMHC6A07T8 | ZETEX |
获取价格 |
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE | |
ZXMHC6A07T8 | DIODES |
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COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET H-BRIDGE | |
ZXMHC6A07T8(1) | ETC |
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ZXMHC6A07T8(2) | ETC |
获取价格 |