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ZXMHC3A01T8 PDF预览

ZXMHC3A01T8

更新时间: 2024-02-29 14:15:37
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
10页 281K
描述
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE

ZXMHC3A01T8 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.17
Is Samacsys:N配置:BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):2.7 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:4
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):14.5 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMHC3A01T8 数据手册

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ZXMHC3A01T8  
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE  
SUMMARY  
N-Channel = V  
P-Channel = V  
= 30V : R  
= -30V : R  
= 0.12 ; I = 3.1A  
D
(BR)DSS  
(BR)DSS  
DS(on)  
DS(on)  
= 0.21 ; I = -2.3A  
D
DESCRIPTION  
This new generation of trench MOSFETs from Zetex  
utilizes a unique structure that com bines the benefits of  
low on-resistance with fast switching speed. This  
m akes them ideal for high efficiency, low voltage,  
power m anagem ent applications.  
SM8  
FEATURES  
S
S
4
Low on-resistance  
Fast switching speed  
Low threshold  
1
G
G
1
4
3
Low gate drive  
D , D  
D , D  
3 4  
1
2
Single SM-8 surface m ount package  
G
G
2
APPLICATIONS  
Single phase DC fan m otor drive  
S
S
3
2
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
PINOUT  
ZXMHC3A01T8TA  
ZXMHC3A01T8TC  
7”  
12m m  
12m m  
1,000 units  
4,000 units  
13”  
DEVICE MARKING  
ZXMH  
C3A01  
Top View  
DRAFT ISSUE E - APRIL 2004  
S E M IC O N D U C T O R S  
1

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