是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 4.8 A |
最大漏源导通电阻: | 0.055 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMD65P03N8TA | ZETEX |
获取价格 |
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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ZXMD65P03N8TC | ZETEX |
获取价格 |
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET |
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ZXMHC10A07N8 | DIODES |
获取价格 |
100V SO8 Complementary enhancement mode MOSFET H-Bridge |
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ZXMHC10A07N8TC | DIODES |
获取价格 |
100V SO8 Complementary enhancement mode MOSFET H-Bridge |
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ZXMHC10A07T8 | DIODES |
获取价格 |
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE |
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ZXMHC10A07T8TA | DIODES |
获取价格 |
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE |
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ZXMHC10A07T8TC | DIODES |
获取价格 |
COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE |
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ZXMHC10A07T8TC | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 1A I(D), 100V, 4-Element, N-Channel and P-Channel, S |
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ZXMHC3A01N8 | DIODES |
获取价格 |
30V SO8 Complementary enhancement mode MOSFET H-Bridge |
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ZXMHC3A01N8TC | DIODES |
获取价格 |
30V SO8 Complementary enhancement mode MOSFET H-Bridge |
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