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ZXMD65N02N8TA PDF预览

ZXMD65N02N8TA

更新时间: 2024-09-24 19:53:31
品牌 Logo 应用领域
捷特科 - ZETEX 开关光电二极管晶体管
页数 文件大小 规格书
4页 92K
描述
Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

ZXMD65N02N8TA 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.38
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):6.6 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e0湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXMD65N02N8TA 数据手册

 浏览型号ZXMD65N02N8TA的Datasheet PDF文件第2页浏览型号ZXMD65N02N8TA的Datasheet PDF文件第3页浏览型号ZXMD65N02N8TA的Datasheet PDF文件第4页 
ZXMD65N02N8  
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS=20V; RDS(ON)=0.025V D=6.6A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
SO8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm) QUANTITY  
PER REEL  
ZXMD65N02N8TA  
13  
12mm embossed  
1000 units  
DEVICE MARKING  
Top View  
ZXMD  
65N02  
DRAFT ISSUE A - AUGUST 2000  
ADVANCED INFORMATION  

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