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ZXMD63P03X PDF预览

ZXMD63P03X

更新时间: 2024-01-31 05:04:55
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 337K
描述
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMD63P03X 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:MSOP-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.12
Is Samacsys:N其他特性:LOW THRESHOLD
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):2 A最大漏源导通电阻:0.185 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-187AA
JESD-30 代码:S-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMD63P03X 数据手册

 浏览型号ZXMD63P03X的Datasheet PDF文件第2页浏览型号ZXMD63P03X的Datasheet PDF文件第3页浏览型号ZXMD63P03X的Datasheet PDF文件第4页浏览型号ZXMD63P03X的Datasheet PDF文件第5页浏览型号ZXMD63P03X的Datasheet PDF文件第6页浏览型号ZXMD63P03X的Datasheet PDF文件第7页 
ZXMD63P03X  
DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS=-30V; RDS(ON)=0.185V; ID=-2.0A  
V
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilizes a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
MSOP8  
FEATURES  
Low on-resistance  
N-channel  
P-channel  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC converters  
Power management functions  
Disconnect switches  
Motor control  
Pin-out  
ORDERING INFORMATION  
DEVICE  
REELSIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
ZXMD63P03XTA  
ZXMD63P03XTC  
7
12 embossed  
12 embossed  
1,000  
4,000  
13  
Top view  
DEVICE MARKING  
ZXM63P03  
ISSUE 1 - OCTOBER 2005  
SEMICONDUCTORS  
1
49  

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