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ZXMD63P02XTA PDF预览

ZXMD63P02XTA

更新时间: 2024-09-24 07:42:35
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 202K
描述
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMD63P02XTA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:MSOP
包装说明:SMALL OUTLINE, S-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.13Is Samacsys:N
其他特性:LOW THRESHOLD配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):1.7 A
最大漏源导通电阻:0.27 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-187AAJESD-30 代码:S-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZXMD63P02XTA 数据手册

 浏览型号ZXMD63P02XTA的Datasheet PDF文件第2页浏览型号ZXMD63P02XTA的Datasheet PDF文件第3页浏览型号ZXMD63P02XTA的Datasheet PDF文件第4页浏览型号ZXMD63P02XTA的Datasheet PDF文件第5页浏览型号ZXMD63P02XTA的Datasheet PDF文件第6页浏览型号ZXMD63P02XTA的Datasheet PDF文件第7页 
ZXMD63P02X  
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS=-20V; RDS(ON)=0.27; ID=-1.7A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
MSOP8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
ZXMD63P02XTA  
ZXMD63P02XTC  
7
12mm embossed  
12mm embossed  
1000 units  
4000 units  
Top View  
13  
DEVICE MARKING  
ZXM63P02  
ISSUE 1 - JUNE 2004  
1

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Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal