是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SOIC-8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.2 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 6.25 A | 最大漏源导通电阻: | 0.025 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZXMC10A816N8 | DIODES |
获取价格 |
100V SO8 Complementary Dual enhancement mode MOSFET | |
ZXMC10A816N8TC | DIODES |
获取价格 |
100V SO8 Complementary Dual enhancement mode MOSFET | |
ZXMC3A16DN8 | ZETEX |
获取价格 |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
ZXMC3A16DN8 | DIODES |
获取价格 |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
ZXMC3A16DN8_05 | ZETEX |
获取价格 |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
ZXMC3A16DN8Q | DIODES |
获取价格 |
30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | |
ZXMC3A16DN8QTA | DIODES |
获取价格 |
Power Field-Effect Transistor, | |
ZXMC3A16DN8TA | DIODES |
获取价格 |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
ZXMC3A16DN8TA | ZETEX |
获取价格 |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET | |
ZXMC3A16DN8TC | ZETEX |
获取价格 |
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |