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ZXM66P03N8TC PDF预览

ZXM66P03N8TC

更新时间: 2024-11-29 22:14:31
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
4页 52K
描述
30V P-CHANNEL ENHANCEMENT MODE MOSFET

ZXM66P03N8TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOIC-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.2
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):6.25 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXM66P03N8TC 数据手册

 浏览型号ZXM66P03N8TC的Datasheet PDF文件第2页浏览型号ZXM66P03N8TC的Datasheet PDF文件第3页浏览型号ZXM66P03N8TC的Datasheet PDF文件第4页 
ZXM66P03N8  
30V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS=-30V; RDS(ON)=0.025  
D=-7.9A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage, power  
m anagem ent applications.  
S O8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC Converters  
Power Managem ent Functions  
Disconnect switches  
Motor control  
D
S
S
S
ORDERING INFORMATION  
D
D
DEVICE  
REEL S IZE  
TAPE WIDTH  
QUANTITY  
PER REEL  
ZXM66P03N8TA  
ZXM66P03N8TC  
7”  
12m m  
12m m  
500 u n its  
2500 u n its  
Top View  
13”  
DEVICE MARKING  
ZXM6  
6N03  
PROVISIONAL ISSUE A - MAY 2001  

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