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ZX5T3ZTA PDF预览

ZX5T3ZTA

更新时间: 2024-11-26 07:42:39
品牌 Logo 应用领域
美台 - DIODES 晶体小信号双极晶体管开关
页数 文件大小 规格书
6页 120K
描述
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER

ZX5T3ZTA 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.33外壳连接:COLLECTOR
最大集电极电流 (IC):5.5 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):110
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):152 MHz
Base Number Matches:1

ZX5T3ZTA 数据手册

 浏览型号ZX5T3ZTA的Datasheet PDF文件第2页浏览型号ZX5T3ZTA的Datasheet PDF文件第3页浏览型号ZX5T3ZTA的Datasheet PDF文件第4页浏览型号ZX5T3ZTA的Datasheet PDF文件第5页浏览型号ZX5T3ZTA的Datasheet PDF文件第6页 
ZX5T3Z  
40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER  
TRANSISTOR IN SOT89  
SUMMARY  
BVCEO = -40V : RSAT = 29m ; IC = -5.5A  
DESCRIPTION  
Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP  
transistor offers low on state losses m aking it ideal for use in DC-DC circuits,  
line switching and particularly charging circuits.  
FEATURES  
SOT89  
Extrem ely low equivalent on-resistance  
5.5 am ps continuous current  
Up to 15 am ps peak current  
Very low saturation voltages < -60m V @ -1A  
APPLICATIONS  
Charging circuits  
DC - DC converters  
MOSFET gate drivers  
Power switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZX5T3ZTA  
7”  
12m m  
1000 units  
DEVICE MARKING  
TOP VIEW  
53Z  
ISSUE 1 - OCTOBER 2003  
1

ZX5T3ZTA 替代型号

型号 品牌 替代类型 描述 数据表
ZX5T3ZTC DIODES

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